Allicdata Part #: | 596-1352-5-ND |
Manufacturer Part#: |
QH03TZ600 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Power Integrations |
Short Description: | DIODE GEN PURP 600V 3A TO220AC |
More Detail: | Diode Standard 600V 3A Through Hole TO-220AC |
DataSheet: | QH03TZ600 Datasheet/PDF |
Quantity: | 2134 |
Series: | Qspeed™ |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 9.8ns |
Current - Reverse Leakage @ Vr: | 250µA @ 600V |
Capacitance @ Vr, F: | 11pF @ 10V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes are one of the most common electronic components and can be found in nearly every circuit. They are a two-terminal, non-linear circuit element that can be used to control the flow of electricity in circuits. A rectifier is a two-terminal electronic component that allows current to flow in one direction only, which makes it useful for converting alternating current (AC) to direct current (DC). A single rectifier is a specific type of rectifier used in AC to DC power conversion applications.
The QH03TZ600 is a single rectifier diode designed to meet the requirements of a variety of AC to DC power conversion applications. It is a 600V, 3A rectifier diode with a low forward voltage drop (Vf) of 0.82V. The QH03TZ600 is ideal for switching power supplies, DC motor speed controls, and AC inverter circuits where its high surge capability ensures reliable operation. It is also used in many automotive and industrial applications.
The working principle of a rectifier diode is based on the PN junction diode. A PN junction diode is formed by joining two types of semiconductor materials - p-type and n-type - together, forming a P-N junction. When a voltage is applied across the junction, the majority carriers - electrons from the n-type and holes from the p-type - are pushed across the junction, giving rise to a depletion region filled with positive ions on the n-type side and negative ions on the p-type side of the junction. This forms a potential barrier that prevents electrons from going further. When the external voltage is negative, the depletion layer becomes wider and there is no current flow through the diode. When voltage is applied in the right direction (forward bias), the depletion region becomes narrower, allowing majority carriers to cross the junction and flowing current through the diode.
In the case of the QH03TZ600, the forward current is limited to 3A by the use of a series resistor. The voltage drop across the diode (Vf) is the voltage that must be applied to the diode in the forward bias direction before it will begin to conduct. The typical Vf for the QH03TZ600 is 0.82V. The reverse leakage current is the amount of current that flows through the diode in the reverse bias direction, and is typically very small for semiconductor rectifier diodes. The QH03TZ600 has a maximum reverse leakage current of 20µA.
Overall, the QH03TZ600 is a great choice for AC to DC power conversion applications, thanks to its high surge capability, low forward voltage drop and low reverse leakage current. Its wide range of application fields and simple working principle makes it a popular choice for many engineers.
The specific data is subject to PDF, and the above content is for reference
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