QMP29GL512P10FFCR10 Allicdata Electronics
Allicdata Part #:

QMP29GL512P10FFCR10-ND

Manufacturer Part#:

QMP29GL512P10FFCR10

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel ...
DataSheet: QMP29GL512P10FFCR10 datasheetQMP29GL512P10FFCR10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: GL-P
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Description

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The QMP29GL512P10FFCR10 is a memory integrated circuit for high speed and high density memory applications, suited for use in embedded systems, personal and industrial digital devices. It features non-volatile cycling endurance and better performance with low power consumption. The chip is fabricated using 55nm embedded Flash technology with a maximum of 512Mbits capacity, allowing it to provide exceptional storage capability in a wide variety of applications.

The QMP29GL512P10FFCR10 is primarily utilized as a code, data and API storage medium. It allows end users to access the code and data quickly, with little or no power required. It also provides for a secure platform for the API, ensuring it remains secure from malicious code. The chip is normally a rewritable, non-volatile type, which can also enable a secure boot recovery. This helps to prevent external tampering and helps with secure device configuration.

The QMP29GL512P10FFCR10 works on the principle of Dynamic Random Access Memory (DRAM) technology. A DRAM is composed of an array of capacitors and corresponding access transistors, which operate similarly to a semiconductor memory chip. This memory device can effectively store one bit of data in each of its cells. It is one of the most widely used forms of memory, and allows for fast access to data stored in the memory.

The QMP29GL512P10FFCR10 memory device is a type of Super Flash memory. It uses a charge pump circuit to boost a 2V to 5.3V voltage level for operation. This boosts the operating speed and the data rate of the memory device. The chip also has an enhanced security for access to the memory, provided by self-decryption of stored data.

The QMP29GL512P10FFCR10 is especially suited for applications such as flash memory for embedded systems, automotive infotainment systems, smart TVs, printer and scanner controllers, “Internet of Things” (IoT) devices, industrial computers, infrared remote controls, camera controllers, and digital media players. It is also suited for machine learning, artificial intelligence, industrial controllers and firmware updates.

Overall, the QMP29GL512P10FFCR10 is an optimal choice for many applications requiring high speed, high density, and secure memory storage. The chip operates on the principle of DRAM technology and also uses an advanced charge pump circuit to boost the voltage. These features, combined with its low power consumption, make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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