Allicdata Part #: | QMP29GL512P10TAI010-ND |
Manufacturer Part#: |
QMP29GL512P10TAI010 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel ... |
DataSheet: | QMP29GL512P10TAI010 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
Description
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Memory is an essential element in the computing system, making the effective storage and retrieval of information possible. Memory can be classified according to its characteristics, such as, random access memory (RAM), read-only memory (ROM) and non-volatile memory. QMP29GL512P10TAI010 is a kind of non-volatile memory, which integrates 8Gb (1Gbit) NAND flash, octa-I/O interface and an extended temperature range of -40℃ to +105℃ for various commercial and industrial applications.
Application Field
QMP29GL512P10TAI010 is a memory device designed for low power, high performance, and low cost. It can be a perfect choice for automotive, industrial and medical system applications. It mainly works in programming the parameters of connected electronic devices, like engine control unit. Additionally, the QMP29GL512P10TAI010 is suitable for applications like HMI Updating, data recorder, infotainment, and any other data storage applications which requires low power consumption, high reliability and long service life.Working Principle
Operation of QMP29GL512P10TAI010 is similar to that of other non-volatile memories. It contains an array of cells built of floating-gate transistors. The cell stores the amount of charge and acts as an analog memory. To “write” information to the memory, the charge is transferred from the floating gate to the substrate, changing the cell’s capacitance. To “read”, the charge is measured, allowing the memory cell state to be known which determines the digital value of that cell. Alternatively, the dielectric thickness, charge level, or current can be measured to determine the digital value. QMP29GL512P10TAI010 stores and reads linear addresses, a form of random-access memory. The addresses are divided into bytes and bits so that each address contains information from 8 digital bits. It is also a write-once technology, meaning that each memory cell will not allow any changes after the data has been written.The MT29GL512P10TAI010 uses an octal I/O interface that is two times faster than a typical quad-plane interface, and is built using a 20-nanometer process technology.The 8Gb NAND flash memory operates at up to 240MB/s, and an enhanced secure erase function removes sensitive data more quickly and reliably than existing solutions.Conclusion
QMP29GL512P10TAI010 is an ideal storage solution for automotive, industrial, and medical applications that require low power, high performance and reliability consideration. Its octa-I/O interface enables it to achieve a fast data transfer rate of up to 240/MBs. It\'s write-once technology allows for data to be stored securely and it has an extened temperature range of -40℃ to +105℃. All these features make QMP29GL512P10TAI010 an attractice choice for those sorts of applications.The specific data is subject to PDF, and the above content is for reference
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