Allicdata Part #: | QN1D2Q0BA30P1-ND |
Manufacturer Part#: |
QN1D2Q0BA30P1 |
Price: | $ 1.39 |
Product Category: | Uncategorized |
Manufacturer: | Panduit Corp |
Short Description: | VERTICAL POWER STRIP 16 A, 230/4 |
More Detail: | N/A |
DataSheet: | QN1D2Q0BA30P1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | * |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
QN1D2Q0BA30P1 is a technology that has applications in many different industries. It is a type of semiconductor where a base layer is formed around a surface, and the material used is usually a thin layer of silicon, which is then coated with multiple layers of oxides. The end result is a structure which is electrically conductive and has a high degree of thermal stability.
QN1D2Q0BA30P1 is used in a variety of applications such as medical equipment, automotive components, military electronics, and consumer electronics. In medical applications, it is used as an insulation layer in surgical implants, and it is also used in the creation of implantable medical devices. In automotive electronics, it is used to create protective layers on electronic components, and it is used in the production of sensors and microcircuits. In military applications, it is used for the protection of circuitry against electronic warfare and radiation. Finally, it is used in consumer electronics to create devices with improved durability, low power consumption, and space efficiency.
The working principle of QN1D2Q0BA30P1 technology is quite simple. The process begins with the deposition of a silicon wafer on a substrate. This wafer is then coated with a thin layer of oxides. Next, a dopant is added to the layer in order to create a p-type or n-type material. The structure is then heated in order to create a strong electrical connection between the substrate and the oxide layer. Finally, the layer is cooled down in order to complete the process.
QN1D2Q0BA30P1 technology can provide a number of advantages over other semiconductor technologies. It is a relatively low-cost technology due to its simple structure and process. It also offers a high degree of thermal stability, which makes it ideal for use in high temperature applications. In addition, the technology is said to have higher power efficiency than other semiconductor technologies. Finally, its small size makes it ideal for use in portable and wearable devices.
QN1D2Q0BA30P1 technology is a powerful tool for a variety of industries. It offers a low-cost solution for applications which require high levels of thermal stability, power efficiency, and space efficiency. With its simple structure and easy process, it can be used to create more reliable and efficient devices, making it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
QN1D2B2BN0861 | Panduit Corp | 0.69 $ | 1000 | VERTICAL POWER STRIP 32 A... |
QN1D2Q0BA30P1 | Panduit Corp | 1.39 $ | 1000 | VERTICAL POWER STRIP 16 A... |
QN1D2B2BN30P1 | Panduit Corp | 1.39 $ | 1000 | VERTICAL POWER STRIP 32 A... |
DIODE GENERAL PURPOSE TO220
CB 6C 6#16 SKT RECP
CA08COME36-3PB-44
CA-BAYONET
CB 6C 6#16S SKT PLUG
CAC 3C 3#16S SKT RECP LINE