QRC1220T30 Allicdata Electronics
Allicdata Part #:

QRC1220T30-ND

Manufacturer Part#:

QRC1220T30

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: DIODE MODULE 1.2KV 99A
More Detail: Diode Array 1 Pair Common Cathode Standard 1200V 9...
DataSheet: QRC1220T30 datasheetQRC1220T30 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 99A
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 200A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The QRC1220T30 is an array of Automotive-Grade dual Schottky rectifier diodes with low reverse leakage, low forward voltage drop and high surge current capability. It offers a great combination of thermal stability, high efficiency and low total harmonic distortion (THD).The main application fields of QRC1220T30 are automotive systems, solar cells, and power management systems. In automotive applications, it is used in power supply systems, battery charging, and power conditioning circuits. It also serves a crucial purpose in the manufacturing of solar cells, where it helps regulate current levels and prevent power system failure. In addition, it is used in power management systems, as it ensures stability and minimizes total harmonic distortion. The working principle of the QRC1220T30 is quite simple. It consists of two semiconductor elements, the cathode and anode, which are doped with different amounts of impurities. The most important feature of this device is the low forward voltage drop, which is normally determined by the doping level. When forward bias is applied to the diode, electrons within the semiconductor structure experience a high electric field which enables them to move from the cathode to the anode. This movement of electrons produces an electric current which is the basic principle behind the operation of any diode.In addition, the reverse bias of the diode is also important, since it implements the blocking of current passing through the diode. This is done by the P-N junction in the diode, which increases the electronic resistance of the device against reverse bias, thus preventing current passing through it in the opposite direction.Finally, the array of QRC1220T30 diodes also provides very high surge current capability. This is achieved by the addition of a special metal oxide layer to the semiconductor substrate, which helps to improve the thermal stability and reduce the forward voltage drop.Overall, the QRC1220T30 array is an ideal solution for automotive applications, solar cells, and power management systems that require efficient and reliable power supply. It offers excellent thermal stability, low forward voltage drop, high surge current capability, and low THD levels.

The specific data is subject to PDF, and the above content is for reference

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