Allicdata Part #: | QRD1210T30-ND |
Manufacturer Part#: |
QRD1210T30 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | DIODE MODULE 1.2KV 53A |
More Detail: | Diode Array 1 Pair Series Connection Standard 1200... |
DataSheet: | QRD1210T30 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io) (per Diode): | 53A |
Voltage - Forward (Vf) (Max) @ If: | 3.5V @ 100A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 1mA @ 1200V |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The QRD1210T30 is a surface mount rectifier array with two diodes per chip that is suitable for use in low voltage applications. The package of this series is small 8-Lead (2mm x 2mm) Plastic Small Outline Package (PSOP), which provides a reasonable electrical performance while benefiting from the reduced package size. It has a maximum operating temperature range of -55°C to +175°C. It has an ultra-low forward voltage drop and reverse leakage current. This product also features low reverse recovery time, low power dissipation, moisture resistance and guards against reverse voltage.
Application Field for QRD1210T30
The QRD1210T30 rectifier array provides an alternative to the standard axial-lead type rectifiers with its small package size, good performance and ultimately cost reduction, making it a perfect fit for commercial applications. It is especially suitable for applications of pulsing circuits, high-frequency backlight inverters, solar-primed pumps, DC/DC converters and many more. It is also suitable for lower voltage operations such as portable electronic devices and battery-powered systems.
Working Principle of QRD1210T30
The QRD1210T30 is composed of two schottky diodes, each of them is made up of a metal-to-semiconductor junction. Molecules of the junctions are arranged to permit the current to flow in one direction but not in the other. A PN junction is formed when a region of positive charge on one side of the junction meets a region of negative charge on the other side. The electrons on the negative side and the holes on the positive side are acted by a built-up potential that prevents current from flowing through the junction in a simple circuit. When forward biasing is applied and the potential is overcome, current starts flowing through the diode, allowing electric charge to pass from the n-type material to the p-type material.
When the forward-bias voltage exceeds a certain level, the current will soon rise to a large amount. In the case of the QRD1210T30, this breakdown voltage is typically 0.3V which is relatively lower than other rectifier arrays. This breakdown voltage will also be affected by both forward and reverse conduction, thus involving two parameters. Additionally, the bipolar junction of the diode has a unique feature known as the depletion region, forming a barrier between the two sides. This prevents any electric charge from passing through and acts like a switch that can be controlled depending on the voltage level applied.
Conclusion
The QRD1210T30 is a surface mount rectifier array that utilizes schottky diodes to softly switch on and off the current paths. The small package size of this rectifier array is suitable for a variety of applications, especially those that involve low voltage operations such as portable electronic devices and battery-powered systems. With an ultra-low forward voltage drop, low reverse leakage current and low reverse recovery time, this rectifier array is suitable for many low voltage operations.
The specific data is subject to PDF, and the above content is for reference
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