QS3VH257PAG

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Logic and signal switches, multiplexers, and decoders are essential components of today\'s CPUs and embedded systems. This article will explain the specific application field and working principle of the QS3VH257PAG.

The QS3VH257PAG is a level shifter/buffer designed to provide bidirectional level shifting between 1.2V and 1.8V voltage domains. The device can drive 4-bit data, 4-bit address, and bus control signals. Its logical low voltage level is set by the on-chip VCCIO and its logical high level is set by the VCCA.

This device is most suitable for applications that require level-shifting between two voltage domains, for example, devices that need to exchange data between 1.2V and 1.8V (or from 0.9V to 3.3V). For example, it could be used in mobile and embedded systems that require both voltage domains.

The working principle of the QS3VH257PAG is based on pMOS/nMOS diode stacks. It provides level shifts between the 1.2V and 1.8V voltage networks using the pMOS diode stacks. The diode stack has a capacitance of around 0.2pF and an on resistance of up to 5kOhm.

The device provides bidirectional connectivity between the two voltage domains by using a pMOS-nMOS pair, with the pMOS providing the level-low side, and the nMOS providing the level-high side. It also includes a level-shift buffer, which amplifies and de-amplifies signals across the two voltage domains.

The device offers excellent performance in terms of the speed of level shifting. It can switch from low-to-high level in less than 10ns, and from high to low level in less than 11ns. In addition, it operates at very low power consumption and is ESD protected.

The QS3VH257PAG is ideal for applications that require bidirectional level shifting between 1.2V and 1.8V voltage domains. It provides excellent performance, with fast switching time and low power consumption. Furthermore, it is protected from ESD damage, making it a versatile and reliable device.

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