QS5Y1TR Allicdata Electronics
Allicdata Part #:

QS5Y1TRTR-ND

Manufacturer Part#:

QS5Y1TR

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP 30V 3A TSMT5
More Detail: Bipolar (BJT) Transistor Array NPN, PNP (Emitter C...
DataSheet: QS5Y1TR datasheetQS5Y1TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.17082
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.25W
Frequency - Transition: 300MHz, 270MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5
Description

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The QS5Y1TR is an array of bipolar junction transistors (BJT) from the QS5Y series of transistor devices from Omron, primarily intended for use in industrial and automation applications. The device consists of five individual transistors arranged in an array configuration, allowing for flexible configurations that can be optimized to meet specific requirements. The device is available in a few different configurations, including PNP and NPN, as well as various collector-current ratings.

At the heart of all transistors is the base-emitter junction which allows current to flow in either direction (for NPN transistors) or from the emitter to the collector (for PNP transistors) by controlling the input voltage. In the case of BJT arrays such as the QS5Y1TR, these multiple transistors are arranged in an array configuration to provide higher current capabilities when compared to a single transistor output. This allows the device to be optimized for specific applications, such as motor control, switching, level shifting, and general-purpose analog and digital circuits.

The QS5Y1TR is designed to operate from a wide range of supply voltages, from 6V to 20V. The device has an excellent frequency response, allowing for a switching frequency range of up to 10zHz, as well as low output source and sink current for low-power operation. Additionally, the array has a robust power supply rejection ratio (PSRR) of 40dB, allowing for reliable operation in noisy environments. The device also has a peak collector-emitter voltage (Vce) of 20V and can sink or drive up to 500mA depending on the configuration.

The array is also designed with an integrated temperature sensor, allowing the circuit to monitor the temperature of the device and adjust the switching frequency or impedance accordingly. This feature helps to ensure reliable operation, even in extreme temperatures or under frequent circuit operation. Additionally, the device has an internal active current limiting feature which provides effective overcurrent protection and helps to reduce component failures due to overcurrent.

The QS5Y1TR is a versatile BJT array that offers high current capabilities, excellent frequency response and great flexibility for integration into a variety of applications. It is well suited for motor control, switching, level shifting, and general analog and digital circuits. This device is well suited for use in control systems, power supplies, and other industrial and automation solutions due to its robust design, low-power operation, and integrated temperature and overcurrent protection.

The specific data is subject to PDF, and the above content is for reference

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