QS8F2TCR

QS8F2TCR transistors are special purpose transistors that feature a semi-insulating substrate and a planar heterojunction between the source and drain regions. These special purpose transistors have a low voltage rating and low power dissipation, which makes them ideal for applications requiring extended temperature operation and high sensitivity. This device is also suitable for use in medical and scientific instruments, process control, and data acquisition systems.The QS8F2TCR transistor is composed of three layers, the substrate layer, the source layer, and the drain layer. The substrate layer is made up of semi-insulating gallium arsenide (GaAs), which isolates the source and drain layers and prevents damage to the transistors due to electric current. The source and drain layers are composed of two different types of semiconductor – n-type and p-type – which are connected together by a planar heterojunction. This heterojunction creates a two-dimensional electrode that is used to conduct current across the two layers.The working principle of the QS8F2TCR transistor is based on its multiple layer structure. When the electrical signal is applied to the source layer, electrons cross the heterojunction and move towards the drain layer. At the same time, positively charged holes move towards the source layer. As the electrons and holes cross the heterojunction, electrons in the source layer are attracted to the positively charged holes in the drain layer, creating a current flow between the two layers.The QS8F2TCR transistors provide several advantages in terms of their application field. The low voltage rating and low power dissipation of the device make it suitable for stable operation at extreme temperatures. In addition, their planar heterojunction creates a two-dimensional electronic field which is suitable for carrying out precise operations. This makes it ideal for use in medical and scientific instruments, as well as in process control, data acquisition, and other instrumentation systems.In conclusion, QS8F2TCR transistors are special purpose transistors that are ideal for applications requiring extended temperature operation and high sensitivity. The device is composed of a semi-insulating GaAs substrate, two layers of different semiconductors, and a planar heterojunction. Its working principle relies on electrons and holes crossing the heterojunction to create a current flow. Its low voltage rating, low power dissipation, and two-dimensional electronic field make it suitable for use in medical and scientific instruments, process control, and data acquisition systems.

QS8F2TCR

ROHM Semicon...

0.22 $

1000

MOSFET/TRANS P-CH/PNP TSM...