QSB34CZR Sensors, Transducers |
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Allicdata Part #: | QSB34CZRTR-ND |
Manufacturer Part#: |
QSB34CZR |
Price: | $ 0.26 |
Product Category: | Sensors, Transducers |
Manufacturer: | ON Semiconductor |
Short Description: | PHOTODIODE 940NM SMD |
More Detail: | Photodiode 940nm 50ns 120° 2-SMD, Z-Bend |
DataSheet: | QSB34CZR Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.23257 |
2000 +: | $ 0.21706 |
5000 +: | $ 0.20931 |
10000 +: | $ 0.20621 |
25000 +: | $ 0.20156 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Wavelength: | 940nm |
Color - Enhanced: | -- |
Spectral Range: | 400nm ~ 1100nm |
Diode Type: | PIN |
Responsivity @ nm: | -- |
Response Time: | 50ns |
Voltage - DC Reverse (Vr) (Max): | 32V |
Current - Dark (Typ): | 30nA |
Active Area: | 6.5mm² |
Viewing Angle: | 120° |
Operating Temperature: | -25°C ~ 85°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Z-Bend |
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Optical Sensors - Photodiodes can be used to detect incident and reflected light and are commonplace equipment for a wide range of sensing and communication systems. An example of this type of technology is the QSB34CZR photodiode which has been developed by Infineon Technologies for applications demanding outstanding performance and reliability. This article will explore the application field and working principles of this device.
The QSB34CZR is an innovative surface mounted device, designed for modern industrial, consumer and automotive applications. It is semiconductor based and features a unique combination of extremely low dark current characteristics and excellent speed performance.
The integrated light sensor structure operating in the nm range is optimized for very wide angle light detection capability, making it suitable for a broad range of applications including lighting control, reflective sensing, optical navigation, light registration, level sensing, color recognition and biomedical imaging. Moreover, its outstanding linearity capability makes it perfect choice for more sophisticated applications where an accurate analogue output is essential.
The photodiode has a built-in avalanche photodiode (APD) structure which enables excellent noise performance at low and high input current levels. This helps ensure high accuracy in a wide range of applications. The photodiode also offers a high thermal resistance and excellent UV stability.
When it comes to working principles, the QSB34CZR photodiode operates on a simple concept. When light hits the structure–which consists of active layers, etch stop layers, a photodiode, and an avalanche photodiode–it releases electrons from those layers. The electrons then flow through the photodiode and avalanche photodiode to produce an output current, which is proportional to the intensity of the incident light.
This type of device is capable of operating under a range of conditions, including extreme temperatures, vibration and shock. It can also be used with both analog and digital signal detection. Additionally, the photodiode can be combined with other transistors, such as transistors optimized for extended ambient lighting conditions, increasing its range of applications.
These features make the QSB34CZR photodiode an excellent choice for a wide variety of applications, including those in the industrial, consumer, and automotive sectors. It has been designed to take advantage of the latest breakthroughs in materials science, helping to ensure reliable and accurate performance. With its excellent linearity, speed, and low dark current characteristics, the QSB34CZR is an excellent choice for a multitude of sensing and communication systems.
The specific data is subject to PDF, and the above content is for reference
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