Allicdata Part #: | QSX2TR-ND |
Manufacturer Part#: |
QSX2TR |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 30V 5A TSMT6 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 5A 200MHz 500mW S... |
DataSheet: | QSX2TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.16388 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 40mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 500mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSMT6 (SC-95) |
Base Part Number: | QSX |
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Bipolar junction transistors (BJTs) are three-terminal devices used for switching and amplifying electrical signals. The type of transistor used for a particular application depends on its field and working principle. The QSX2TR single bipolar junction transistor (BJT) is an example of a BJT that is used in various applications related to analog signal processing, such as amplifiers, voltage dividers, frequcy dividers, and modulators. This type of device is well-suited for applications requiring low voltage, low current, and highly linear responses.
The QSX2TR single bipolar junction transistor is a silicon-based PNP transistor, which means that it has positive and negative polarities. The device has three terminals (base, emitter, and collector) which are used to control the current flow between the different terminals. When the base terminal is connected to a voltage source, electrons will be attracted to it and flow through the device. The emitter terminal, which is usually connected to a ground reference, will emit the electrons. The collector terminal, which is typically connected to a separate voltage source, will capture the electrons and supply them with current. This current will then be used to drive the output of the device, which is typically connected to an amplifier.
The power gain of the device is determined by its capacitive parameters, such as the base-emitter capacitance (CBE) and the collector-base capacitance (CBC). These parameters are closely related to the device\'s forward current gain (α) and reverse current gain (β). In addition, the power gain is also affected by the device\'s output impedance, which is closely related to its reverse breakdown voltage (BVr) and its saturation voltage (VCE).
In order to ensure optimum performance of the QSX2TR bipolar junction transistor, it is important to ensure that the device is properly designed and implemented. One way to do this is to use a standard breadboard design, which enables the user to easily test the device and to adjust the required parameters. Another way to ensure optimum performance is to use simulation software programs that can simulate the desired operating conditions and provide a feedback loop to the user. This approach allows the user to observe the effects of parameter adjustments on the performance of the device.
The QSX2TR single bipolar junction transistor is a versatile device that can be used in a wide range of applications. It is well-suited for analog signal processing applications that require low voltage, low current, and highly linear responses. The device can also be used in switching applications, such as digital logic circuits and pulse-width modulators. In addition, the device is also useful in frequency dividers and modulators, as well as in audio applications. With its versatile design, the QSX2TR single bipolar junction transistor is an ideal choice for many analog and digital applications.
The specific data is subject to PDF, and the above content is for reference
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