QSX7TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	12V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 25mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	270 @ 200mA, 2V
Power - Max:	500mW
Frequency - Transition:	400MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSMT6 (SC-95)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The QSX7TR is a type of bipolar junction transistor (BJT). A BJT is a three-terminal solid state semiconductor device that can be used to amplify signals or switch current paths depending on the configuration of the device. The QSX7TR is a type of BJT array, which is a grouping of multiple BJTs put together to form a single, larger package. This type of transistor array provides an increased current handling capability, increased gain, and allows for faster device switching times. This article will discuss the applications and working principles of the QSX7TR transistor array.

Applications

The QSX7TR can be used in a variety of circuits due to its current handling capability and wide range of operating voltages. In general, the QSX7TR is well suited for use in power management systems, instrumentation, and RF amplifier circuits. In power control systems, the array can be used to control the voltage and current in a device. The array’s current and voltage capabilities allow for a wider range of power control options, as well as better power efficiency.The transistor array can also be used in instrumentation and measurement devices, such as oscilloscopes. Oscilloscopes measure time-varying electrical signals and display them on a graphic display. The current handling capability of the QSX7TR array makes it well suited for use in oscilloscopes and other instrumentation devices.In addition, the QSX7TR array is well-suited for use in radio frequency (RF) amplifier circuits. These circuits are used to amplify very low power electrical signals and transmit them over a distance or to an antenna. The inherent gain of the transistor array allows for higher signal strength when compared to a single BJT transistor, which makes it well-suited for RF applications.

Working Principles

The working principles of the QSX7TR are based on the same principles as other BJT transistors. The array contains multiple transistors that are connected in a series configuration. Each transistor is connected in such a way that it has an input signal, an output signal, and a ground terminal. When an input signal is applied to the lead of one of the transistors, the voltage at the output will be expressed as the sum of the voltages at each of the other transistors in the chain. This is known as current gain, and is expressed as a ratio of the output current vs. the input current. The gain of the transistor array can be varied by manipulating the individual transistors, which can be done by biasing them with a voltage or a current. This can be used to control the gain of the array and the operating range of the device. As with other BJT transistors, the QSX7TR is also capable of switching current paths. This is done by varying the current or voltage at either the input or output of the transistor array. When a sufficient amount of current is applied, the output of the transistor array will switch from its “off” state to its “on” state, which will then allow current to pass from the input to the output legs of the array.

Conclusion

The QSX7TR is a type of bipolar junction transistor array that is well suited for use in power control systems, instrumentation, and RF amplifier circuits. The array provides increased current handling capability, increased gain, and faster device switching times compared to single BJT transistors. The working principles of the QSX7TR are based on the same principles as other BJT transistors, with the added benefit of being able to vary its gain and operating range by manipulating the individual transistors.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description