QSZ2TR Allicdata Electronics
Allicdata Part #:

QSZ2TR-ND

Manufacturer Part#:

QSZ2TR

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP 30V 1.5A 5TSMT
More Detail: Bipolar (BJT) Transistor Array NPN, PNP (Emitter C...
DataSheet: QSZ2TR datasheetQSZ2TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11904
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 1.25W
Frequency - Transition: 300MHz, 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5
Base Part Number: QSZ
Description

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The QSZ2TR series of transistors are field-effect transistors (FETs) with integrated arrays of dual transistors and are manufactured and marketed by Motorola, Inc. This series is specially designed and manufactured to provide maximum performance and economy in small package sizes. They are also made suitable for a variety of applications, including audio and frequency applications, logic and power control, and digital signal and power conversion.

The QSZ2TR series of FETs consist of two bipolar junction transistors (BJT’s) connected in an integrated array in a single package. The array can be driven by a single control voltage, allowing for the conversion of an analog signal or power source into one that is suitable for digital applications. The size and shape of the array are optimized to provide optimum performance and economy in small package sizes.

The QSZ2TR series works by the application of a bias voltage to the gate terminal. The gate voltage turns on the p-channel and n-channel transistors in the two transistors in the integrated array. The gate voltage also controls the current conduction through the channels by controlling the threshold voltage of the p-channel and n-channel transistors. This bias voltage allows for the adjustment of the size of the gate-field region, which in turn controls the current flow through the array.

The QSZ2TR series is capable of handling up to five amperes of current, and it can also be used for RF (radio frequency) switching applications. It is also equipped with several protection features such as over current protection, over temperature protection and short circuit protection. The maximum voltage rating of the transistors depends on the device and the number of transistors in the integrated array.

The QSZ2TR series is also suitable for use in automotive systems and industrial automation. The series is commonly used in traction control, engine control, and fuel injection systems. In industrial automation, the series is used mainly in HVAC systems, robotics, and other motor control applications.

The QSZ2TR series is also capable of providing high efficiency power through its ability to integrate a large number of reliable transistors in a single small package. This allows for increased power levels without increasing package size. In addition, the QSZ2TR series has low power dissipation and high reliability due to its efficient heat dissipation.

The QSZ2TR series of FETs is ideal for applications that require high performance and reliability. Its small package size and the ability to control current through efficient package design makes it the perfect choice for applications where size and power efficiency are important. Its versatility and reliability makes it suitable for a variety of applications, ranging from digital signal conversion to automotive and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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