QSZ4TR Allicdata Electronics
Allicdata Part #:

QSZ4TR-ND

Manufacturer Part#:

QSZ4TR

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP 30V 2A 5TSMT
More Detail: Bipolar (BJT) Transistor Array NPN, PNP (Emitter C...
DataSheet: QSZ4TR datasheetQSZ4TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.15610
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 1.25W
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5
Base Part Number: QSZ
Description

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The QSZ4TR is a four-channel transistor array suitable for a variety of applications. It is designed to act as a linear amplifier, allowing for enhanced signal quality. This type of transistor array has numerous advantages over discrete transistor implementations, and is typically used in signaling circuits and power distribution systems.

The QSZ4TR is an array of four NPN bipolar transistors. The individual transistors are connected in a common emitter configuration. This arrangement provides an increase in gain, higher input impedance, and larger bandwidth than a single transistor. By connecting the transistors in an array, significant benefits can be realized over using discrete units.

To understand how an array of four transistors works, we must look at each part of the array separately. The first is a single NPN transistor. An NPN transistor consists of three pins: the collector, the base and the emitter. When a current is applied to the base, it can be amplified through the collector and emitter. This action allows for additional gain and improved signal-to-noise ratios.

The second part is the array of transistors. This type of configuration consists of four NPN transistors connected in a common emitter configuration. In this configuration, the current entering the array through the base is amplified and sent to the collector and emitter. The array is designed to provide an increase in gain, and an increase in input impedance.

The third part of the array is the output. The amplified current is sent to the collector which is connected to the output circuit. The output is then used to drive the load, providing the desired signal. The output circuit will also provide protection against over-voltage or overheating.

The QSZ4TR is a very versatile array of four NPN transistors. This type of array allows for enhanced signal quality, higher input impedance, and improved reliability. Additionally, it provides a significant improvement in signal-to-noise ratios when compared to discrete transistor implementations. Furthermore, its implementation in a signaling circuit or power distribution system can reduce costs and help to improve system performance.

In conclusion, the QSZ4TR is a reliable and versatile array of four NPN transistors that can be used in a variety of applications. It is designed to act as a linear amplifier, allowing for enhanced signal quality. This type of transistor array can offer numerous benefits over discrete transistor implementations, and is typically used in signaling circuits and power distribution systems.

The specific data is subject to PDF, and the above content is for reference

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