R1EX24008ASAS0I#U0

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Memory

R1EX24008ASAS0I#U0 is a type of memory designed for dynamic random-access memory (DRAM) with integrated circuits (ICs) for general-purpose applications. It is used for audio, data storage, and memory management needs in various applications such as servers, workstations, notebooks, tablets, printers, and televisions. This type of memory has a capacity of 8G bits and utilizes DDR3/DDR4 technology.

The R1EX24008ASAS0I#U0 memory consists of a single chip packaged with a printed circuit board (PCB). It is built using a 0.72mm ball- grid array (BGA) package. The BGA package houses a single 800MHz memory chip that provides memory bandwidth up to 4.2Gbits/s. This memory has 9-bit ECC protection and is equipped with an on-chip voltage regulator to ensure reliable operation.

The R1EX24008ASAS0I#U0 memory utilizes a synchronous dynamic random-access memory (SDRAM) to store data and instructions. The SDRAM uses a burst architecture with support for burst transfer lengths of up to 256. A DDR3/DDR4-supported memory interface enables the SDRAM to communicate with the host processor. The memory can support up to four external memory banks, each with a capacity of up to 8GB. This makes the R1EX24008ASAS0I#U0 an ideal solution for high-performance memory applications.

This memory also features on-chip error correction (ECC) and data security features. The ECC feature enables the memory to detect and correct any single-bit errors during data transmission. The data security feature allows the memory to remain inaccessible unless the correct authentication credentials are used. Additionally, the memory can be put into a “sleep” mode to conserve energy when not in use.

The R1EX24008ASAS0I#U0 memory is beneficial for various applications due to its high capacity, low power consumption, fast data transfer rate, and reliability. It is suitable for use in multiprocessor systems and can meet the demands of high-performance applications. Furthermore, its on-chip error correction and data security features allow the memory to withstand external interference during operation. This makes it a reliable and efficient alternative to traditional memory technologies.

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