R1EX25064ASA00I#S0

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R1EX25064ASA00I#S0 is a type of memory device which can be applied in different industries and increase the efficiency of production processes. It is a high-capacity memory device, with a capacity of up to 64GB, which is capable of storing massive amounts of data. It is also very energy efficient, consuming only 0.7~1watt power in a wide temperature range. This cutting-edge memory device is ideal for industrial applications such as embedded systems, automation and process control.

R1EX25064ASA00I#S0 has a working principle of read-write-erase operations. It is an NAND-based Flash memory which uses cells composed of a floating gate between two terminals (Source and Drain). The cell terminals are connected to two word-lines and a reference line. A positive voltage is applied to the cell terminal and write-data is written on the floating gate. Data read is also possible with a negative voltage applied to the cell terminal. To erase the stored data, a voltage of more than 5 Volts is applied. The floating gate insulates the charge, so data can last for longer periods of time.

This memory device has a wide range of applications in industrial, military and medical applications. It is widely used in automotive, medical and industrial robotics, process control, factory automation, communication systems and space applications. It is also suitable for wearables and medical devices due to its low power consumption and wide temperature range.

R1EX25064ASA00I#S0 is an advanced NAND-based Flash memory offering a high capacity of up to 64GB with an excellent energy efficiency. It has a read-write-erase working principle and it is suitable for a wide range of applications, including automotive, medical, industrial, military and space applications.

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