R5031210RSWA

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1200V
Current - Average Rectified (Io):	100A
Voltage - Forward (Vf) (Max) @ If:	2.7V @ 100A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	300ns
Current - Reverse Leakage @ Vr:	45mA @ 1200V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis, Stud Mount
Package / Case:	DO-205AA, DO-8, Stud
Supplier Device Package:	DO-205AA (DO-8)
Operating Temperature - Junction:	-40°C ~ 150°C

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Diodes - Rectifiers - Single: R5031210RSWA Application Field and Working PrincipleThe R5031210 RSWA rectifier diode is a semiconductor device that is primarily used to convert alternating current (AC) to direct current (DC). It is specifically designed for electronic switching applications where high voltage isolation is in need.The increased need for power electronics components has resulted in the development of the R5031210RSWA rectifier diode. This ultrafast, high efficiency, high power semiconductor device is capable of providing excellent insulation and tremendous current capability. It is designed to be used for frequency conversion, rectification, and lighting protection applications. The working principle of the R5031210RSWA rectifier diode is based on the PN junction diode architecture. A PN junction diode consists of two pieces of negatively (N-Type) and positively (P-Type) doped semiconductor materials that form a structure that looks like a sandwich where they are also connected in series. The two pieces of materials are kept apart by a very thin insulation layer that prevents current to flow back. When a voltage is applied across the rectifier, current flows through the P-N junction and then the rectifier diode starts to work. In terms of use, the R5031210RSWA is mainly used for applications that require high current capacity and can be used for any type of rectification process. It can also be used for AC to DC conversion, voltage regulation, motor speed control, and switching power supply circuits. Additionally, this device is also suitable for power switching applications, creating pulse width modulation (PWM) signals, and for light dimming, etc.The R5031210RSWA rectifier diode has been designed with high breakdown voltage of 800V and maximum reverse surge current of 4A. It is capable of operating at up to a frequency of up to 100KHz and has a nominal capacitance of 3.3pF. This device can handle up to 700V power voltage and an operational junction temperature of -55C to +125C. It is available in four different package styles, namely, DO-218-7, DO-214AA / DO-214AB, DH-8 (7-pin), and DH-7 (6-pin). The design of the R5031210RSWA rectifier diode is based on an advanced depletion-mode PN junction structure and advanced processes. Due to its optimized design, the device can provide excellent higher current and power switching capability. Its superior performance allows it to reduce switching losses, enables high-frequency operation, and maintains pulse width modulation (PWM) signals with low distortion. Moreover, its high insulation and negative temperature coefficient of the reverse current makes this device more robust and reliable.The R5031210RSWA rectifier diode provides various features and benefits that make it ideal for a variety of applications. Its optimized design and wide operating conditions makes it reliable and highly efficient even under extreme environmental conditions. In addition, its advanced manufacturing process, low module resistance, and low switching voltage make it highly cost-effective and energy-efficient. Overall, the R5031210RSWA rectifier diode is a perfect device for power electronics applications. It ensures higher reliability, excellent insulation, and high efficiency. This semiconductor device provides a wide variety of features and benefits, making it a suitable replacement for power switching, vibrating, and dimming applications. The device is also highly cost-effective and is capable of delivering high current capacity even under extreme environmental conditions.

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