Allicdata Part #: | R6220430PSOO-ND |
Manufacturer Part#: |
R6220430PSOO |
Price: | $ 46.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | DIODE GP 400V 300A DO200AA R62 |
More Detail: | Diode Standard 400V 300A Chassis Mount DO-200AA, R... |
DataSheet: | R6220430PSOO Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 41.42650 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 300A |
Voltage - Forward (Vf) (Max) @ If: | 2.75V @ 800A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 50mA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AA, A-PUK |
Supplier Device Package: | DO-200AA, R62 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are part of the most fundamental electrical components, and they are used in all types of applications, ranging from filtering of alternating current (AC) waves to rectifying the current to only one direction, which is typically done to convert it to direct current (DC). Rectifiers are an especially useful kind of diodes since they allow DC circuit devices to work with AC power sources. The R6220430PSOO is a single rectifier diode that is used in many applications, and its construction and working principle are essential in discovering its applicability in various fields.
The R6220430PSOO diode is a Planar Diffused Junction type diode, and it is constructed from a semiconductor wafer and then encapsulated in a DO-41 package, which helps to protect the diode from dirt, dust, and other foreign materials; the package also provides electrical insulation as well. The size of the package is also important since a smaller footprint is used in high-density applications. The diode’s maximum peak reverse voltage or PRV is 600V, and the maximum average forward current is 0.4A; these specifications depend on the ambient temperature; for instance, the operating temperature range is -55 to +175 degrees Celsius, and the maximum temperature at the solder terminals can reach up to +300 degrees Celsius.
The R6220430PSOO diode working principle is based on the p-n junction semiconductor; the double rectifier diode has two p-n junctions, while the single diode has only one. The p-n junction consists of dopants; the N-type region has excess electrons and the P-type region has less electrons than the N-side. In this way, a single junction becomes two regions with opposite charges; the valence band electrons and the conduction band electrons. These charges interact via the recombination process. When a voltage is applied across the p-n junction, the electrons from the n-type region move to the p-type region causing an electric current to flow, this is called the diode’s “forward bias”. If the reverse voltage is applied, the electrons are pushed away from the p-type region, and no current will flow, this is called the diode’s “reverse bias”.
The R6220430PSOO diode has a wide range of applications in different fields. In power supplies, the diode is used to convert an AC voltage to a DC voltage via rectification. In telecommunications and computers, the diode can be used in pulse modulation, meaning it can switch a signal several times per second. In radio, the diode can be used to mix two signals together, which is useful for getting the correct frequency and amplifying signals. In sensing designs, the diode can be used to measure small changes in an input signal when used with a comparator, an essential function in modern medical imaging systems and medical detectors.
The R6220430PSOO diode is an essential component used in various applications from power supplies, sensing, and radio systems to telecommunications. Its ability to switch between forward and reverse voltage states and current flow makes it highly applicable for multiple uses. Its planar diffused junction construction and DO-41 package size provides ideal protection, insulation, and reduces its footprint for high-density uses. The diode’s maximum PRV of 600V and maximum average forward current of 0.4A, ensure that the diode conductivity is capable of fulfilling multiple use cases even within a wide range of operating temperatures.
The specific data is subject to PDF, and the above content is for reference
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