R7S02008XX Allicdata Electronics
Allicdata Part #:

R7S02008XX-ND

Manufacturer Part#:

R7S02008XX

Price: $ 67.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: DIODE GP 2KV 800A DO200AA R62
More Detail: Diode Standard 2000V 800A Chassis Mount DO-200AA, ...
DataSheet: R7S02008XX datasheetR7S02008XX Datasheet/PDF
Quantity: 1000
30 +: $ 60.60350
Stock 1000Can Ship Immediately
$ 67.34
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10µs
Current - Reverse Leakage @ Vr: 50mA @ 2000V
Capacitance @ Vr, F: --
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Description

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The R7S02008XX is a single rectifier diode designed to provide high performance operation in a wide variety of applications. It is a popular choice for those applications requiring fast switching times, good recovery performance, and low forward voltage drop. The diode is constructed using a fast, low-voltage rectifier diode with a low forward voltage drop, providing improved efficiency, faster switching times, and low current losses.

Its wide range of application fields and working principles make it ideal for a variety of applications, including rectifier and converter circuits, power supply systems, and high-current rectifier circuits. In rectifier circuits, the R7S02008XX can be used to convert AC to DC power, allowing direct current (DC) power to be supplied directly from an AC power source. In a DC-DC converter circuit, the diode is used to convert one DC voltage to another, which is useful for powering electronics, LEDs, and other devices requiring a certain voltage level.

When used in power supply systems, the R7S02008XX provides improved efficiency and better thermal performance for increased reliability. Its fast switching times and low forward voltage drop help reduce power consumption and keep circuits running efficiently. Its small size also makes it suitable for use in tight spaces.

The R7S02008XX\'s diode structure consists of junction layers and epitaxial layers, which provide improved conduction performance and reduce the need for additional cooling. The epitaxial layer performs the majority of the current switching and rectification, while the junction layer protects the diode from excessive current. The junction layer also ensures minimal leakage current and prevents the diode from becoming damaged due to over-current.

In high-current rectifier circuits, the diode can be used to reduce the forward voltage drop and increase the overall efficiency of the circuit. The diode\'s high power dissipation rating makes it ideal for use in circuits that require large amounts of current. Furthermore, the fast switching times and high current carrying capacity of the diode help reduce circuit noise and reduce power losses.

Overall, the R7S02008XX is a highly popular option for those applications requiring fast switching times, good recovery performance, and low forward voltage drop. Its structure and design make it well suited for application in a wide variety of applications, from rectifier and converter systems to power supply systems and high-current rectifier circuits. Its small size also makes it ideal for use in tight spaces.

The specific data is subject to PDF, and the above content is for reference

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