RB151L-40TE25 Allicdata Electronics
Allicdata Part #:

RB151L-40TE25-ND

Manufacturer Part#:

RB151L-40TE25

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE SCHOTTKY 40V PMDS
More Detail: Diode Schottky 40V Surface Mount PMDS
DataSheet: RB151L-40TE25 datasheetRB151L-40TE25 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): --
Speed: Fast Recovery = 200mA (Io)
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Description

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RB151L-40TE25 is a rectifier diode device in a 2-pin SMT package, which is suitable for surface mounting onto printed circuit boards. This diode device offers a low forward voltage drop as well as fast turn-on and low software power loss. It is ideal for various applications in automotive, consumer, industrial and other applications including switching mode power supplies, bridge-rectification in power supplies, reverse surge protection, and general rectification.

Application Field

The RB151L-40TE25 diodes are extensively used in automotive, consumer and other applications. A few of its features make it a widely used electronic device in many applications. The most common applications involving this diode include in automotive applications like Headlight Control, Turbocharger Control, Ignition Control and Pollution Control as well as in consumer applications like Home Appliances, Camera Flash, Set-top Box. Other applications where this diode can be used are Switching power supplies, Battery charging, Drive circuits and Motor speed controls.

Working Principle

Diodes are a two-terminal electronic device which permits the flow of electric current in one direction only. They are formed from two layers of semiconductor material, p-type and n-type, which are joined together in a long cylinder. This junction is referred to as the ‘p-n junction’. In the case of the RB151L-40TE25 multi-layer diodes, a number of p-type layers and n-type layers are joined in the arrangement - p-type layer, n-type layer, p-type layer, n-type layer, and so on. As a result, multiple p-n junctions are formed and hence they are called multi-layered diodes.

The RB151L-40TE25 diodes have a breakdown voltage rating of 40V. This means that when this voltage is applied across the diode, the current starts to rapidly increase. This is called the breakdown voltage. The diode also exhibits a forward voltage drop. This is the voltage difference between the anode and the cathode and this is usually around 0.7 volts.

When the RB151L-40TE25 diode is connected in a forward biased direction, the p-n junction of the device becomes forward biased. This allows current to flow in the forward direction. When the anode of the diode is connected to a higher voltage than the cathode, then the p-n junction of the diode becomes reverse biased. This means that the diode starts to act as an open circuit and no current can flow through it.

Therefore, the RB151L-40TE25 diode offers two major functions - it acts as a switch, permitting the flow of current in the forward direction, and it also offers protection against reverse currents. This is why this type of diode is widely used in numerous electronic devices.

The specific data is subject to PDF, and the above content is for reference

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