RB160LAM-90TFTR Discrete Semiconductor Products

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The RB160LAM-90TFTR diode is a single, four-layer rectifier diode. It is designed to deliver high performance in applications such as DC-DC converters, solar inverters, power supplies, and power tools. The RB160LAM-90TFTR is an advanced rectifier diode that has been optimized to provide higher efficiency and improved power handling capabilities.

The RB160LAM-90TFTR is a fast-recovery rectifier diode with a reverse recovery time of only 90 nanoseconds. This helps to reduce total switching losses and improve system efficiency. The diode has an ultra-fast switching time and offers a low forward voltage drop of only 1.7V at 10A, ensuring low power losses and higher power efficiency.

The diode also provides an excellent current-to-voltage ratio, with a maximum forward current of 40A and a maximum peak reverse voltage of 600V. This makes it suitable for a broad range of applications. In addition, the diode has a very low leakage current of less than 0.001 uA at 25°C, making it ideal for high-density power electronics.

The RB160LAM-90TFTR diode works by using the PN junction of the semiconductor material in its construction. A PN junction is created by combining a semiconductor material with an impurity to create doped regions on either side of the junction. A diode is formed when a p-type region is joined to an n-type region, forming a PN junction.

When a positive voltage is applied to the anode (positive side) of a diode, the electrons in the n-type region are attracted to the anode and a current is able to flow. This is the forward-biased condition. When a negative voltage is applied to the anode of a diode, the electrons in the n-type region are repelled and a current cannot flow. This is the reverse-biased condition.

In the forward-biased condition, the current flow is primarily limited by the circuit resistance as the diode has a near zero voltage drop. The reverse-biased condition is primarily limited by the breakdown voltage of the diode which is determined by the doping level. The RB160LAM-90TFTR diode has a maximum reverse recovery time of 90 nanoseconds, which helps to reduce switching losses and improve system efficiency.

In summary, the RB160LAM-90TFTR diode is an ultra-fast, low forward voltage drop, fast-recovery rectifier diode that is highly suited for use in high-density power electronics. Its near zero forward voltage drop, low power losses, and high-current capabilities make it ideal for DC-DC converters, solar inverters, power supplies, and power tools. Its reverse recovery time of 90 nanoseconds gives it high system efficiency for low switching losses.

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