RB162LAM-40TFTR Discrete Semiconductor Products

Diodes allow current to flow in one direction only and by doing so, they rectify alternating current (AC) electricity into pulsed direct current (DC) electricity. A single diode can act as a switch, allowing or disallowing electricity to flow through a circuit. The RB162LAM-40TFTR is a single switching diode, with a high voltage threshold typically used for military and aerospace applications.

The RB162LAM-40TFTR is typically used in high-frequency applications, such as frequency multipliers, dc motors, optocouplers, frequency synthesizers, and magnetic amplifiers. It can also be used in switching circuits and power electronics systems, where the high breakdown voltage makes it capable of operating under high stress conditions. It is most commonly used as a switching device in circuits with a high voltage threshold or when a fast on/off operation is required.

The structure of the RB162LAM-40TFTR consists of two N-type doped regions made of a silicon semiconductor material. There is a PN-junction formed between the two regions. When a forward bias voltage of 0.6 V or greater is applied, current can flow through the diode due to the fact that the potential barrier between the junctions is lowered. In other words, the diode is switched “on” by the forward bias to allow current to flow through the structure.

When a reverse bias voltage is applied to the structure, a high potential barrier of 8 V is formed between the junctions which does not allow any current to flow through. In other words, the diode is switched “off” by the reverse bias to disallow any current from flowing through the structure.

The main parameters generally associated with the RB162LAM-40TFTR are the peak repetitive reverse voltage (VRRM) which is rated to 163 V, and the forward biased peak repetitive surge current (IFSM) which is rated to 4 A. The working temperature range of the device is typically -55°C to +125°C.

In summary, the RB162LAM-40TFTR is an advanced single Schottky diode designed for high frequency applications and military/aerospace applications. It has high peak reverse and forward voltage thresholds, allowing it to operate in power electronics systems under high stress conditions. Its main parameters are VRRM=163 V, IFSM=4 A, and Operating Temperature Range of -55 ° C to +125 ° C.