RBE05VM20ATE-17

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The RBE05VM20ATE-17 is a single rectifier diode and is designed for a broad range of applications. The unit has a package outline of TO220 and has a voltage rating of 200 V. The maximum current rating of the diode is 20 A making it an ideal choice for a range of applications. The mounted junction temperature is a maximum of 150 °C, and the storage temperature range is -40 to +125 °C.

The RBE05VM20ATE-17 is a PN junction diode and has a negative resistance characteristic where the forward current flowing through it increases with temperature. This negative temperature coefficient combined with the maximum current rating of 20 A makes it an ideal choice for high-power applications. The maximum reverse voltage of the diode is 5 V, making it suitable for charging batteries.

The package outline of the diode is hermetically sealed, making it fully sealed from air and moisture and allowing it to operate in extreme environments. The RBE05VM20ATE-17 has high robustness and low power dissipation ensuring a long lifetime and minimal maintenance. The reverse recovery time of the device is 5 ns, making it suitable for high speed switching applications. The diode can easily be mounted on a heat sink to dissipate the heat generated by it.

The RBE05VM20ATE-17 is widely used in high-power switching applications such as switching power supplies, converters, motor drives and UPS systems. It can also be used in rectifier circuits and battery charger systems as it can withstand large reverse voltages. It can also be used in automotive and aerospace applications where low power dissipation and high robustness is required. The device is also suitable for installation in commercial equipment and telecommunication systems.

The working principle of the diode is based on the PN junction. When a voltage is applied to the diode, a thin layer of electrons and holes is formed throughout the junction. This layer is commonly referred to as a depletion region. This region is protected from the external current flow by a PN junction barrier which opposes any electronic flow. When positive voltage is applied to the P terminal, the electrons flow through the depletion region towards the N terminal, while the holes go towards the P terminal. The flow of electrons and holes creates a current called forward current which can be used to drive circuits.

The RBE05VM20ATE-17 is a reliable and efficient single rectifier diode suitable for a range of applications. The device is hermetically sealed and has a low power dissipation and high robustness. The diode can handle large reverse voltages, making it an ideal choice for battery charger systems. It is widely used in high-power switching applications, with its fast reverse recovery time allowing for high speed switching technology.

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