Allicdata Part #: | RBR2L30ATE25TR-ND |
Manufacturer Part#: |
RBR2L30ATE25 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 2A PMDS |
More Detail: | Diode Schottky 30V 2A Surface Mount PMDS |
DataSheet: | RBR2L30ATE25 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.14330 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 490mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 80µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | PMDS |
Operating Temperature - Junction: | 150°C (Max) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RBR2L30ATE25 belongs to the single diodes-Rectifiers group. It is extensively used in applications like converters, inverters, and inductive loads. It is also used in sensor circuits, charge pumps, lighting control, etc.
It is widely used, not just because of its excellent properties, but also because of its low cost and easy availability, making it an economical and readily obtainable option.
RBR2L30ATE25 is a thyristor-based product that features excellent electrical properties, such as high blocking voltage, low leakage current, and low power dissipation. Its low-inductance characteristics provide good performance and high reliability.
This product is designed with a ferroelectric gate oxide, which is valuable in applications requiring fast switching response. This oxide layer is engineered to minimize the disconnection between the gate-oxide and the substrate material. The fast switching at high voltages makes it an ideal device for high-voltage switching applications.
RBR2L30ATE25 has high current ratings typically ranging from 20A to 50A for standard package formats. It is available in various package sizes such as TO-220, TO-220F, TO-220FP, TO-220WFS, TO-247, and TO-247D. Their operating temperature range is from -40 to 125°C.
Working Principle:
When a trigger voltage greater than the threshold voltage is applied to the gate of the RBR2L30ATE25 diode, the device enters an ‘on’ state and rectifies the current through the diode. In this case, the diode always turns on during the positive half cycle and turns off during the negative half cycle and acts as a rectifier by producing a DC output voltage. This process is known as rectification and hence, the device has been named as a rectifier diode.
When the current passes through the forward biased diode, the voltage drop across it depends on the current flowing through it. When the current flow is high, the voltage drop reduces, which helps reduce the device’s forward voltage drop and improves device efficiency. Due to its low voltage rating, this device can be used in applications that require low power consumption.
RBR2L30ATE25 is highly useful for applications that demand a reliable, low cost, and efficient rectifier diode. It features excellent electrical properties, low leakage current, and low power dissipation. Its fast switching characteristics make it suitable for applications that require a fast response. Furthermore, its wide operating temperature range makes it an ideal choice for temperature sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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