RC48F4400P0TB0EJ

RC48F4400P0TB0EJ memory is a non-volatile memory used in a variety of electronic applications and devices. It is a type of flash memory, which is an electronic non-volatile computer memory that can be easily changed, erased, and rewritten. It stores information without power, as it is a type of nonvolatile memory. Nonvolatile memory can retain data even after the power has been shut off.RC48F4400P0TB0EJ memory is used in a variety of applications, such as industrial, automotive, medical, and consumer. Industrial applications use the memory for storing programmable logic, programmable logic arrays, system controllers, telecommunications, storage, and power supplies. Automotive applications use the memory for controlling embedded systems and safety-related systems. Medical applications are typically seen in medical imaging, patient monitoring, and laboratory systems. Consumer applications use the memory for handheld digital cameras, cell phones, digital audio players, and gaming devices.RC48F4400P0TB0EJ memory works with a double gate transistor and an integrated charge pump circuit to increase its performance and reduce power consumption. This memory uses NOR flash memory technology that features floating gates with two stacked gates: control gate and floating gate. It includes a floating gate that can be electrically charged to store data, and a control gate which is responsible for controlling the electrical charge on the floating gate. The double gate transistor works with the integrated charge pump to transfer the charge stored on the memory cell. This technology enables the memory to be small, fast, and cheap to manufacture.The architecture of RC48F4400P0TB0EJ memory is a two-gate structure, composed of a control and a floating gate structure. It usescharge-trapping technology that stores information by adding or removing electrons trapped in the oxide layer of the floating gate. The control gate controls the movement of the electrons from and to the floating gate. It is programmed by programming the control gate voltage which moves the charge from the floating gate, to the control gate. The memory is erased by removing the electrons from the floating gate with a large negative voltage.The RC48F4400P0TB0EJ memory offers some benefits over other types of memory, such as superior power management and high speed. Its data retention time is typically more than the demanded 10 year life time. Its write and erase time is fast, with minimum write latency and fast erase time, which makes it suitable for many applications. Its small size and easy integration into electronic packages makes it simple to incorporate into small electronic designs. Its reliability and endurance characteristics also make it an attractive choice for many applications.Overall, the RC48F4400P0TB0EJ memory is a robust and reliable memory suitable for a variety of applications. Its low power consumption, small package size, fast access, and data retention make it an ideal choice for a variety of electronic applications. Its double gate transistor and integrated charge pump make it efficient and speedy, while its two-gate architecture make it reliable and long lasting.

RC48F4400P0VB0E4	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0TB0EJ	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0TB00A	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0VB0E3	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0VB00A	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0VB0EA	Micron Techn...	--	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0TB0E4	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
RC48F4400P0VB0EJ	Micron Techn...	0.0 $	1000	IC FLASH 512M PARALLEL 64...
ATSTK600-RC48	Microchip Te...	7.92 $	1000	STK600 ROUTING CARD AVRST...