RC48F4400P0VB0EJ Allicdata Electronics
Allicdata Part #:

RC48F4400P0VB0EJ-ND

Manufacturer Part#:

RC48F4400P0VB0EJ

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 64EASYBGA
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52...
DataSheet: RC48F4400P0VB0EJ datasheetRC48F4400P0VB0EJ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 100ns
Base Part Number: 48F4400P0
Supplier Device Package: 64-EasyBGA (8x10)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 100ns
Series: Axcell™
Clock Frequency: 52MHz
Memory Size: 512Mb (32M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is an essential component of any system that processes information and data. The RC48F4400P0VB0EJ is a component that provides memory for computer systems. It is a Static Random Access Memory (SRAM) chip that can store four data bytes at any given time. The chip is composed of metal-oxide-semiconductor (MOS) transistors that can be switched on and off, allowing for a variety of data manipulations and operations.

The RC48F4400P0VB0EJ is used in a variety of computer memory applications, such as data caches, and in systems that require the highest speed of data access. This is due to the fact that SRAM chips have the highest speed of accessing data of all memory types, making them the ideal choice for fast-paced applications. SRAM is typically used as RAM in computers, because it provides the highest reliability and performance.

The working principle of the RC48F4400P0VB0EJ is based on the structure and design of MOS transistors. Each transistor consists of two MOS devices, the source and the drain, which are connected by a gate. The source is connected to the ground in a typical MOS transistor, while the drain is connected to a voltage supply. When the gate receives a signal from the control circuitry, it allows electrons to flow from the source to the drain, which in turn changes the voltage output at the drain.

In the RC48F4400P0VB0EJ, the MOS transistors are used to store data in a two-state system. When the gate of a transistor receives a voltage pulse, it ensures that the charge on the drain is locked in, signaling a logical state of 1. If the gate does not receive a voltage pulse, the charge on the drain will revert to a logical state of 0. This allows information in the form of 0s and 1s to be stored in the RC48F4400P0VB0EJ\'s memory array.

The RC48F4400P0VB0EJ has a variety of features that make it an ideal choice for computer memory applications. It has a large storage capacity, with 1 megabyte (MB) of SRAM by default. It is also extremely fast, with access times of just 15 nanoseconds (ns). Since the chip can store four data bytes at a time, it is a good choice for applications that require fast read and write speeds. In addition, the chip is completely ASIC compatible, meaning that it can be easily integrated into any modern processor.

In conclusion, the RC48F4400P0VB0EJ is a highly reliable and powerful memory component for a variety of applications. It has a large storage capacity, fast access times, and is ASIC compatible. In addition, it operates using the principles of MOS transistors, which are well understood. Thanks to these features, the RC48F4400P0VB0EJ is an ideal choice for computer memory applications.

The specific data is subject to PDF, and the above content is for reference

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