RD2006LS-SB5 Allicdata Electronics
Allicdata Part #:

RD2006LS-SB5-ND

Manufacturer Part#:

RD2006LS-SB5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 20A TO220FI
More Detail: Diode Standard 20A Through Hole TO-220FI(LS)-SB
DataSheet: RD2006LS-SB5 datasheetRD2006LS-SB5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Description

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Diodes, also known as rectifiers, are electronic components used to convert AC to DC. The most common type is the single diode, which is frequently used in power supplies and other power applications. One type of single diode is the RD2006LS-SB5 which is a bigger, higher current single diode.

Application Field

The RD2006LS-SB5 is a passivated, planar, diffused Junction Silicon Rectifier, which is designed to provide high surge current up to 1000A for printed circuit board assemblies. It is a suitable for printed circuit board and other applications. It can be used in various power supply applications and can easily replace standard competitive devices. Moreover, several of these devices can be used on the same circuit to provide more surge current capability.

The RD2006LS-SB5 is also used in automotive applications. It can be configured to provide a safe, reliable alternative to switching diodes or other discrete components. It also helps reduce parts count and costs associated with automotive equipment.

The RD2006LS-SB5 is also used in similar applications such as lighting, telecommunication, instrumentation, and solar energy systems. This diode can also be used as a protection diode in circuits that use high frequencies.

Working Principle

The working principle of the RD2006LS-SB5 is based on the principle of PN junction. As the voltage across the PN junction increases, the current through the junction increases and a forward bias is created, resulting in current flow. The device is composed of a PN junction, which when reverse-biased, prevents current from flowing through.

The RD2006LS-SB5 operates in forward-bias when a positive voltage is applied to the anode and a negative voltage is applied to the cathode. This forward-biasing causes current to flow from the anode to the cathode. The RD2006LS-SB5 has a rated peak repetitive reverse voltage of 600 V, a maximum forward voltage of 1.07V and a minimum leakage current of 0.2µA at 25°C.

In addition to the above characteristics, the RD2006LS-SB5 features a high breakdown voltage, low thermal resistance, and fast recovery time. It is also designed with a silicon nitride passivation layer which provides excellent protection against mechanical stress and provides improved thermal stability.

Conclusion

The RD2006LS-SB5 is a high current, lateral single diode which is well suited for various applications including power supplies, automotive equipment, lighting, telecommunication, and solar energy systems. Its main advantages include high surge current, high breakdown voltage, fast recovery time, and low thermal resistance. It is a suitable replacement for standard competitive devices. With its numerous advantages, the RD2006LS-SB5 is a great choice for power applications.

The specific data is subject to PDF, and the above content is for reference

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