REF195ESZ

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1. DESCRIPTION

The REF195ESZ series precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy. The REF19x series is made up of micropower, low dropout voltage (LDV) devices, providing stable output voltage from supplies as low as 100 mV above the output voltage and consuming less than 45 μA of supply current. In sleep mode, which is enabled by applying a low TTL or CMOS level to the SLEEP pin, the output is turned off and supply current is further reduced to less than 15 μA. The REF19x series references are specified over the extended industrial temperature range (−40°C to +85°C) with typical performance specifications over −40°C to +125°C for applications, such as automotive. All electrical grades are available in an 8-lead SOIC package; the PDIP and TSSOP packages are available only in the lowest electrical grade.

2. FEATURES

    1. Temperature coefficient: 5 ppm/°C maximum

    2. High output current: 30 mA

    3. Low supply current: 45 μA maximum

    4. Initial accuracy: ±2 mV maximum1

    5. Sleep mode: 15 μA maximum

    6. Low dropout voltage

    7. Load regulation: 4 ppm/mA

    8. Line regulation: 4 ppm/V

    9. Short-circuit protection 

3. Pin configuration

4. Package overview