RF081MM2STR Discrete Semiconductor Products |
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Allicdata Part #: | RF081MM2STR-ND |
Manufacturer Part#: |
RF081MM2STR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 200V 800MA PMDU |
More Detail: | Diode Standard 200V 800mA Surface Mount PMDU |
DataSheet: | RF081MM2STR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | PMDU |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes are electronic components which are capable of conducting current in one direction only and are very commonly used in power switching, rectification and signal conditioning applications. The RF081MM2STR is a type of silicon diode specifically designed to meet the needs of specific applications and provide stable and reliable performance. This article provides an overview of the RF081MM2STR’s application field, working principle and its features.
Application Field
The RF081MM2STR is commonly used in applications requiring the efficient rectification of AC mains power. It is often used as a rectifying element in power supplies, allowing the AC mains voltage to be converted into DC voltage. It is also used in power controllers and signal conditioning applications, where it can be used as a rectifying element for smoothing noisy signal or for signal threshold detection. Other applications include switch-mode power supplies, voltage limiting, voltage transformation and over-current protection.
Working Principle
The RF081MM2STR is a junction diode, meaning that it is constructed from two layers of doped semiconductor material forming a p-n junction. This junction exhibits rectifying properties, allowing current to flow easily in one direction and blocking current in the opposite direction. The width and composition of the junction determine the forward voltage drop, allowing control of the voltage drop across the junction as required.
In effect, the junction diode acts as a gate, allowing a current pulse to pass when the forward voltage is exceeded, while blocking current when the reverse voltage exceeds the junction’s threshold. This makes the RF081MM2STR suitable for applications where precise control of the direction and rate of current flow is required.
Features
The RF081MM2STR features an doublerpoled plated design, which ensures complete and uniform conduction across the entire junction. This guarantees a consistent performance, with less variation in the voltage drop when compared to other types of diodes. It also has a low forward voltage drop of 0.5V, enabling efficient rectification and power delivery without wasting energy.
The RF081MM2STR also has a high thermal and electrical stability, which makes it suitable for applications which require a high level of reliability. It also has a temperature coefficient of -2.2mV/K, enabling precise temperature compensation and precise control of the output voltage. Finally, the RF081MM2STR is rated for an operating temperature range of -55°C to 125°C, making it suitable for use in extreme temperatures.
In conclusion, the RF081MM2STR is a highly reliable, efficient and precise single-pole rectifying diode which is commonly used in AC power rectification and signal conditioning applications. It has a low forward voltage drop and a wide temperature operating range, which makes it suitable for a variety of applications. Due to its features, the RF081MM2STR is a popular choice for power controllers, power supplies and other signal conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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