RF1603ASQ

Test Frequency:	3.5GHz
Supplier Device Package:	12-QFN (2.5x2.5)
Package / Case:	12-UFQFN Exposed Pad
Operating Temperature:	-30°C ~ 85°C
Voltage - Supply:	2.2 V ~ 2.7 V
Impedance:	50 Ohm
Features:	DC Blocked
IIP3:	73dBm
P1dB:	--
Series:	--
Insertion Loss:	0.7dB
Isolation:	28dB
Frequency Range:	DC ~ 2.5GHz
Circuit:	SP3T
Topology:	Reflective
RF Type:	CDMA, GSM, EDGE, W-CDMA
Part Status:	Discontinued at Digi-Key
Packaging:	Tray

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF Switches are commonly used in wireless communication applications, such as satellite communication, cellular communication, radio frequency (RF) transmission, and more. They are used to control the flow of electrical energy in a wireless communication system. The RF1603ASQ is a switched RF component that enables communication over a wide range of frequencies.The RF1603ASQ is a surface mount RF switch that operates in the frequency range of 0.8GHz to 1.2GHz, making it suitable for applications such as GSM, LTE, UMTS, and WCDMA. The RF switch is constructed with an integrated RF switch die that is capable of handling high frequency operations. It is designed to be used in cellular base station applications, allowing for multiple frequency bands and multiple antennas to be used in a single base station system.The RF1603ASQ is a monolithic high isolation RF switch designed to offer robust performance. It is constructed with an integrated RF switch die, which includes an RF switch controller, two ports for antenna signals, one differential port for RF path switching, and an integrated pre-driver circuit. The RF switch is designed for operation in the 0.8GHz to 1.2GHz frequency range and can operate up to a maximum voltage of 33V. The integrated pre-driver circuit ensures the RF switch is able to switch without creating any additional signal loss, thus providing high linearity, power handling capability, and low insertion loss.The working principle of the RF1603ASQ is based on a common-gate transistor structure. When a signal is inputted on one port of the transistor structure, it causes an electronic charge to be generated on the gate. This gate voltage causes the two signal paths (positive port and negative port) on the transistor structure to be connected, thus allowing the signal to pass through the RF switch. When the gate voltage is removed, the two signal paths are disconnected, thus making the RF switch effectively off. In addition, the RF1603ASQ features an integrated RF switch controller, which enables the device to be tuned to the desired frequency range. The RF switch controller can be tuned to the desired range by adjusting the bias voltage on the gate, thereby controlling the maximum frequency range of the RF switch. The RF switch controller can be programmed to accept up to 8-bit data signals for switching applications.The RF1603ASQ is an ideal component for applications requiring high isolation, low insertion loss, and low VSWR (voltage standing wave ratio). It is a robust switch that is suitable for use in high-frequency applications such as GSM, LTE, UMTS, and WCDMA. The integrated RF switch controller allows for high-frequency operation and allows the device to be tuned to the desired frequency boards. The integrated pre-driver circuit ensures the RF switch is able to switch without creating any additional signal loss, thus providing high linearity, power handling capability, and low insertion loss. All in all, the RF1603ASQ is an ideal component for applications requiring high performance, low insertion loss, and high isolation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description