RF505B6STL Discrete Semiconductor Products |
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Allicdata Part #: | RF505B6STLTR-ND |
Manufacturer Part#: |
RF505B6STL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 600V 5A CPD |
More Detail: | Diode Standard 600V 5A Surface Mount CPD |
DataSheet: | RF505B6STL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPD |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | RF505B6S |
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The RF505B6STL is a 600V 5A Single N/S Common Cathode Schottky Rectifier Diode. It is formed of an epitaxial silicon layer put between an N-type silicon substrate and a Schottky barrier alloyed at the top of the reverse junction, which is made of a circular P+ guard ring. This diode features low forward voltage drop, superior High-temperature reverse leakage current and fast switching speed. This device is suitable for a wide range of applications, including switch mode power supply (SMPS), TV receiver and general rectification purpose.
Applications
The RF505B6STL is a single Schottky rectifier diode that is widely used in many applications, such as:
- High speed switching and general purpose rectification
- Telecommunications
- DC to DC power conversion
- Power Supply and AC to DC rectification
- Voltage regulation
- Lighting ballast
- Battery charging
Working Principle
The RF505B6STL is a forward biased diode, which means that it allows current to flow in one direction only. The diode also functions as a rectifier, which is a device that converts alternating current to direct current. When the diode is forward biased, the junction of the P+ guard ring and the Schottky barrier alloyed at the top of the reverse junction creates a low voltage drop with fast switching speed on the forward biased condition. When the diode is reverse biased, the junction of the N-type silicon substrate and the Schottky barrier alloyed at the top of the reverse junction creates a high breakdown voltage with a higher reverse leakage current.
Conclusion
The RF505B6STL is a single N/S Common Cathode Schottky Rectifier Diode that is suitable for a wide range of applications, such as switching, regulating, and rectifying. It features low forward voltage drop, superior High-temperature reverse leakage current, and fast switching speed. By understanding the working principle of the RF505B6STL, designers and engineers can easily incorporate it into various applications to achieve desired results.
The specific data is subject to PDF, and the above content is for reference
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