RFCS04023000DBTWS

Silicon Capacitors are increasingly becoming a favorite choice of components for many applications including RF communications, signal processing, power supply, and sensing, and offer many advantages. The use of Silicon Capacitors has become widespread in high-performance RF and sensor systems, as these components provide improved power dissipation over traditional metal oxide dielectrics.

RFCS04023000DBTWS is a two layer silicon capacitor that features a lower parasitic inductance than its predecessors. It is composed of two layers that are fabricated with an ultra-high capacitance dielectric layer with a low dielectric constant (<3.0) between them. This technology enables a larger effective capacitance in a much smaller form factor than before possible, and provides the improved performance required for modern RF and sensor systems.

The application field for this two layer capacitor is mainly related to RF communications and signal processing. Thanks to its efficient design and high capacitance, it can be used in a variety of areas such as radar line detection, TETRA base station antennas, WiMAX, LTE/LTE-Advanced, GNSS systems, and smart home sensors. Other potential applications include communications systems, power amplifiers and mobile communication systems.

The working principle of the two layer silicon capacitor is based on the electrical field effect created by a thin dielectric layer between two conductive thin laminates. When an electric field is applied, the electrons in the dielectric layer are attracted or repelled, resulting in a change in the electric field across the laminates. This change generates a capacitive effect which is proportional to the area of the two layers and to the permittivity of the dielectric layer. This capacitive effect is then used to store an electrical charge which can be routed to other components in the system.

The two layer silicon capacitor technology provides improved power dissipation than traditional metal oxide dielectrics, and presents a much lower parasitic inductance than single layer components. The low dielectric constant of the material also provides for a higher capacitance in a reduced form factor. This technology also provides improved mechanical ruggedness which makes it suitable for use in a wide variety of electronic applications.

RFCS04023000DBTWS two layer silicon capacitor is an excellent component for use in a variety of high-performance RF and sensor systems. Its smaller size and higher capacitance offer improved performance over traditional metal oxide dielectrics, and its mechanical ruggedness provides a suitable component for a range of different applications.