RFCS04028200CJTWS

Series:	RFCS
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
Capacitance:	8.2pF
Tolerance:	±5%
Voltage - Breakdown:	25V
ESL (Equivalent Series Inductance):	--
Applications:	--
Features:	--
Operating Temperature:	-55°C ~ 125°C
Package / Case:	0402 (1005 Metric)
Height:	0.016" (0.41mm)
Size / Dimension:	0.040" L x 0.020" W (1.02mm x 0.51mm)

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<p>Silicon Capacitors are increasingly being utilized around the world as a reliable non-volatile memory storage device for electronic components. The RFS04028200CJTWS application field and working principle is an example of one such device. This application field and working principle utilizes a combination of two different kinds of storage technologies; the combination of non-volatile memory storage and the use of ferroelectric memory storage.</p><p>The Non-volatile memory, or NVM, refers to a type of memory that remains active even when power is removed from the device. This means that information can be stored within the device even when power is completely turned off, and then retrieved again when power is restored. This type of memory is usually used in high performance, high density, low power, and low-cost storage applications. The use of NVM in the RFS04028200CJTWS application field and working principle allows for the storage of data in a secure and reliable manner. </p><p>The second type of storage technology that is utilized in the RFS04028200CJTWS application field and working principle is the ferroelectric memory. Ferroelectric memory is a type of non-volatile memory that utilizes a dielectric material, such as a ceramic capacitor, that contains ferroelectric material inside it. This material is used to store data even when power is not applied to the device. The ferroelectric memory storage can store large amounts of data and is ideal for high speed and low-cost storage applications.</p><p>In the RFS04028200CJTWS application field and working principle, the ferroelectric memory is used to store data in the dielectric material of the capacitor. The ferroelectric material is embedded within the layers of the capacitor, and when the capacitor is energized with an electrical current, an electric field is created that causes the ferroelectric material to store data. The stored data is then carried away on the electrical current in the form of an electrical charge which is used to read or write data in the ferroelectric memory.</p><p>The RFS04028200CJTWS application field and working principle is used to provide a reliable and robust memory storage solution for electronic components. The combination of non-volatile memory and ferroelectric memory allows for the storage of data even when power is turned off, making it an ideal choice for high performance, high density, low power, and low-cost storage applications. Furthermore, the ferroelectric memory also provides data retention capabilities, meaning that the data stored in the ferroelectric material will remain even when power is completely removed from the device.</p>

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