Allicdata Part #: | RFCS04029000DBTWS-ND |
Manufacturer Part#: |
RFCS04029000DBTWS |
Price: | $ 0.00 |
Product Category: | Capacitors |
Manufacturer: | Vishay Electro-Films |
Short Description: | CAP SILICON 0.9PF 50V 0402 |
More Detail: | 0.9pF Silicon Capacitor 50V 0402 (1005 Metric) |
DataSheet: | RFCS04029000DBTWS Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | RFCS |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Capacitance: | 0.9pF |
Tolerance: | ±0.1pF |
Voltage - Breakdown: | 50V |
ESL (Equivalent Series Inductance): | -- |
Applications: | -- |
Features: | -- |
Operating Temperature: | -55°C ~ 125°C |
Package / Case: | 0402 (1005 Metric) |
Height: | 0.016" (0.41mm) |
Size / Dimension: | 0.040" L x 0.020" W (1.02mm x 0.51mm) |
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Silicon Capacitors are a type of non-volatile memory devices that use integrated circuits (ICs) to store data. The memory stores electrical charges instead of magnetic charges, which enables greater data density, faster read/write speeds, and increased thermodynamic stability. One such type of silicon-based memory device is the RFCS04029000DTBWS.
The RFCS04029000DTBWS, commonly referred to as a ‘Triple-Wafer’ device, is a non-volatile memory cell developed by Renesas Electronics. It consists of three wafers: the first holds the memory cell and is composed of polysilicon, the second is a logic layer containing N- and P-type mosfets, and the third is a protective layer of metal oxide nitride. The device has high-density memory storage, fast read/write speeds, and enhanced temperature stability. It is targeted for use in radio and consumer digital audio systems, digital video recorders, and other consumer electronics.
The working principle of the RFCS04029000DTBWS is based on the charge-pumping principle. The device utilizes two capacitors which can store electrical charges. When the device is activated, the capacitors are charged, the logic layer is evaluated, and a memory cell is written or read based upon the results of the logic layer evaluation. The logic layer evaluation also determines the data stored in the memory cell. Since the capacitors are charged, the data can be stored for an extensive period of time, even when power is removed from the device.
The RFCS04029000DTBWS is a highly reliable, robust, and cost-effective memory device, which is why it is widely used in various applications. Its use in consumer electronics provides greater data density and faster read/write speeds, which in turn enables faster access to data and easier design implementation. The enhanced temperature stability also allows for higher levels of reliability by improving the device’s ability to withstand extreme temperatures.
In summary, the RFCS04029000DTBWS is a type of silicon-based memory device that uses the charge-pumping principle to store electrical charges. It is used in radio and consumer digital audio systems, digital video recorders, and other consumer electronics and provides greater data density, faster read/write speeds, and enhanced temperature stability. This makes it an ideal choice for applications that require reliable and cost-effective memory storage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RFCS04026000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.6PF 50V 040... |
RFCS04027000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.7PF 50V 040... |
RFCS04028000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.8PF 50V 040... |
RFCS04026000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.6PF 50V 040... |
RFCS04029000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.9PF 50V 040... |
RFCS04024700CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 4.7PF 5% 25V ... |
RFCS04027000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.7PF 50V 040... |
RFCS04025600CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 5.6PF 5% 25V ... |
RFCS04028000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.8PF 50V 040... |
RFCS04026800CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 6.8PF 5% 25V ... |
RFCS04028200CJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 8.2PF 5% 25V ... |
RFCS04028200CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 8.2PF 5% 25V ... |
RFCS04029000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.9PF 50V 040... |
RFCS04025000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.5PF 50V 040... |
RFCS04022000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.2PF 50V 040... |
RFCS04024000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.4PF 50V 040... |
RFCS04022200BJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 22PF 5% 10V 0... |
RFCS04022200CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 2.2PF 5% 50V ... |
RFCS04022700CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 2.7PF 5% 50V ... |
RFCS04022700BJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 27PF 5% 10V 0... |
RFCS04023300CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 3.3PF 5% 25V ... |
RFCS04022700CJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 2.7PF 5% 50V ... |
RFCS04023900CJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 3.9PF 5% 25V ... |
RFCS04023000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.3PF 50V 040... |
RFCS04022200BJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 22PF 5% 10V 0... |
RFCS04022700BJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 27PF 5% 10V 0... |
RFCS04023900CJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 3.9PF 5% 25V ... |
RFCS04024000DBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.4PF 50V 040... |
RFCS04023000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.3PF 50V 040... |
RFCS04021200BJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 12PF 5% 16V 0... |
RFCS04021200CBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 1.2PF 50V 040... |
RFCS04021500BJTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 15PF 5% 16V 0... |
RFCS04021800CBTTS | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 1.8PF 50V 040... |
RFCS04022000DBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 0.2PF 50V 040... |
RFCS04021000CBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 1PF 50V 04021... |
RFCS04021200CBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 1.2PF 50V 040... |
RFCS04021500CBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 1.5PF 50V 040... |
RFCS04021800CBTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 1.8PF 50V 040... |
RFCS04021000BJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 10PF 5% 25V 0... |
RFCS04021200BJTT1 | Vishay Elect... | 0.0 $ | 1000 | CAP SILICON 12PF 5% 16V 0... |
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