RFNL5BGE6STL Allicdata Electronics

RFNL5BGE6STL Discrete Semiconductor Products

Allicdata Part #:

RFNL5BGE6STLTR-ND

Manufacturer Part#:

RFNL5BGE6STL

Price: $ 0.24
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: SUPER FAST RECOVERY DIODE
More Detail: Diode Standard 600V 5A Surface Mount TO-252GE
DataSheet: RFNL5BGE6STL datasheetRFNL5BGE6STL Datasheet/PDF
Quantity: 1000
2500 +: $ 0.21404
5000 +: $ 0.19928
12500 +: $ 0.19189
Stock 1000Can Ship Immediately
$ 0.24
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C (Max)
Description

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The RFNL5BGE6STL is a single rectifier diode with a number of unique features. This device is ideal for applications where a fast switching time is needed, with a low voltage drop and low forward voltage. Additionally, the diode is also capable of reverse blocking voltage of 600V and a very low reverse current of 4mA.

The diode is made from a silicon-based substrate, which offers superior reliability and performance. The reverse blocking voltage of this device is especially rare and makes it ideal for applications where a higher level of protection is needed. Additionally, its low forward voltage ensures that a wide range of load currents can be handled without having to change components.

The RFNL5BGE6STL diode can be used in a variety of power conversion applications, as well as signal switching and level shifting applications. It can also be used in voltage regulation circuits, as the dynamic range and power handling capabilities are quite impressive. One of the main features of this device is its ability to provide a fast switching speed, which can greatly reduce power consumption and improve power deliver efficiency.

The RFNL5BGE6STL diode is simple to install and use in both applications and equipment. Its superior voltage and current capabilities make it suitable for a wide range of applications and its lightweight and relatively small size make it easy to transport. This device is also highly reliable, and its long-term performance can be expected to remain consistent.

The working principle of the RFNL5BGE6STL diode is relatively simple. A silicon substrate is used to create a P-channel device, which allows the device to both pass and block electric current depending on the voltage applied. When a positive voltage is applied to the diode, it allows current to flow, but when a negative voltage is applied, the diode blocks current. This creates a rectifying effect, which is ideal for a number of applications.

In addition to its basic operation, the RFNL5BGE6STL diode can also be employed for a variety of more advanced uses. It can be used as a frequency modulator, for example, or to produce pulse-width-modulated output. It can also be used in high-speed switching applications and in multi-level DC/DC converters.

The RFNL5BGE6STL diode is a powerful device, capable of performing a variety of applications with the highest levels of reliability, accuracy and efficiency. Its reverse voltage blocking capability makes it highly protective, and its low forward voltage ensures a wide range of load currents can be handled without having to change components.

The specific data is subject to PDF, and the above content is for reference

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