RFUH20NS6STL Discrete Semiconductor Products |
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Allicdata Part #: | RFUH20NS6STLTR-ND |
Manufacturer Part#: |
RFUH20NS6STL |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 600V 20A LPDS |
More Detail: | Diode Standard 600V 20A Surface Mount LPDS |
DataSheet: | RFUH20NS6STL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.50243 |
2000 +: | $ 0.46778 |
5000 +: | $ 0.45045 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 2.8V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPDS |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | RFUH20NS6S |
Description
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RFUH20NS6STL is an extremely popular diode, rectifier and single. It is most commonly used for circuit protection, signal separation and desensitization and for noise filtering. The device is also used for voltage, current and power regulation. It has a particularly high current rating, which means it can handle high current load applications, such as those in the automotive, aerospace and industrial sectors. The diode features a very low voltage drop, while still maintaining excellent system linearity and high reliability. In addition, it is highly resistant to temperature shocks and short-term overloads, and it has an operating temperature range of -55C to 150C. The RFUH20NS6STL is a single diode device consisting of two p-type and one n-type semiconductor layers. The first layer is constructed from p-type material, which acts as the anode of the diode. The second layer consists of a n-type material, which acts as the cathode of the device. The third and final layer is formed of a highly conductive layer of metal oxide semiconductor (MOS) material. Each of these layers is bonded together using thermally bonded dielectric materials.The working principle of the device is quite simple. When a voltage is applied to the anode, the p-type material becomes more conductive, allowing electrons to move from the anode to the cathode. At the same time, the n-type material resists the electrons, allowing only a small amount to flow through. This results in a voltage drop across the diode, creating an asymmetrical current flow through the device. The result is a regulated and well-controlled current flow.In summary, the RFUH20NS6STL is a highly popular diode, rectifier, and single device that is most commonly used for circuit protection, signal separation and desensitization, noise filtering, voltage, current and power regulation. Its unique design allows it to handle high current loads, while still providing excellent system linearity and reliability. The device is also highly resistant to temperature shocks and short-term overloads, and it has an operating temperature range of -55C to 150C. It works by regulating and controlling the current flow as a voltage is applied across the two p-type and one n-type semiconductor layers.The specific data is subject to PDF, and the above content is for reference
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