Allicdata Part #: | RGL34D/1-ND |
Manufacturer Part#: |
RGL34D/1 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 500MA DO213 |
More Detail: | Diode Standard 200V 500mA Surface Mount DO-213AA (... |
DataSheet: | RGL34D/1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.08469 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA (Glass) |
Supplier Device Package: | DO-213AA (GL34) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | RGL34D |
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Diodes rectify alternating current (AC) into pulsating direct current (DC). Single unit diodes are one of the most popular types of diodes that deliver the most efficient rectification. One particular example of single unit diode is the RGL34D/1. This article looks at its application field and working principle.
Application Field
The RGL34D/1 is a single unit diode designed by Denon Technology Co. Ltd, and it is widely used in a variety of applications. Its high peak current makes it an ideal choice for devices that require fast switching and rectification, such as switching power supplies, solar inverters, electric vehicles, and charging systems. Because it has low forward voltage drop, it is suitable for devices that require minimal power dissipation. Moreover, it has high reverse clamping voltage and surge current capability, so it can handle large transients and shocks. The RGL34D/1 is also often used for applications involving lowering of contact arcs and for solar panel controllers.
Working Principle
Diodes are formed by junction of two different types of materials, P-type and N-type, in a semiconductor. Depending on the direction of bias, current can either flow or be blocked in a diode. The P-type material has positively charged holes, and the N-type material has negatively charged electrons. When an electric field is applied, the electrons and holes are forced towards the junction. During forward bias, the electrons and holes combine to form an electron-hole pair, thereby forming a conductive path across the junction.
In the case of the RGL34D/1, the junction contains a P-type and an N-type material. When the reverse bias voltage is greater than the breakdown voltage, then current can flow through the junction. This is known as avalanche breakdown and it results in a surge in current. When a forward bias is applied, then the current will flow and the rectified waveform will be formed.
The RGL34D/1 is designed to take advantage of the reverse bias breakdown, allowing it to operate in reverse as well as forward. The use of the reverse bias breakdown allows for a larger peak current, which makes it suitable for high-current applications. Moreover, the reverse voltage breakdown also helps reduce power losses by providing a low forward voltage drop.
Conclusion
The RGL34D/1 is a single unit diode designed to offer efficient rectification of AC signals. Its high peak current capabilities, low forward voltage drop, and surge current capability make it an ideal choice for a wide range of applications. It is an efficient, reliable, and durable option for any device that requires fast switching and rectification.
The specific data is subject to PDF, and the above content is for reference
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