RGP30J-E3/73 Allicdata Electronics
Allicdata Part #:

RGP30J-E3/73-ND

Manufacturer Part#:

RGP30J-E3/73

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 3A DO201AD
More Detail: Diode Standard 600V 3A Through Hole DO-201AD
DataSheet: RGP30J-E3/73 datasheetRGP30J-E3/73 Datasheet/PDF
Quantity: 1000
1 +: $ 0.21000
10 +: $ 0.20370
100 +: $ 0.19950
1000 +: $ 0.19530
10000 +: $ 0.18900
Stock 1000Can Ship Immediately
$ 0.21
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: RGP30J
Description

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The RGP30J-E3/73 is a single rectifier diode with a range of applications and a variety of operating principles. This rectifier diode is a small, medium power, unidirectional current flow which allows for the forward transfer of current away from a power source. The RGP30J-E3/73 is a high performance diode that can provide high efficiency and cost-effective solution for applications as varied as AC-DC conversion, power conversion, voltage regulation and protection and DC-DC conversion.

The most common application of the RGP30J-E3/73 is AC-DC conversion. This is a process in which alternating current (AC) is converted into direct current (DC). The rectifier diode is used to control the direction of the current flow in order to convert the AC into DC. This type of diode can be utilized in many device types – power supplies, batteries, computers, and other electrical equipment – by changing the direction of the current flow through them.

The diode has a wide range of working principles. It is made out of semiconductor materials, such as germanium and silicon. These materials are combined in such a way that the design of a particular diode can be used depending on the application requirements. As an example, the RGP30J-E3/73 diode uses a PN junction, which is made up of two semiconductor layers – an N-type and a P-type layer – to allow for the control of the flow of current. The structure of the PN junction dictates the applicable range of voltages and speeds over which the diode can operate.

Further, the rectifier diode contains a range of other components such as diodes, resistors and capacitors to control the current flow, as well as protection mechanisms that protect the diode from voltage or current overloads. When the diode is reverse-biased, i.e. the reverse current is higher than the forward current, the last component, the reverse breakdown diode, is switched on, limiting the reverse current and protecting the diode from dangerous overloads.

Power efficiency and cost are two important factors when it comes to the RGP30J-E3/73. The number of used devices and the complexity of the circuits needed for the operation of such devices can be reduced, allowing for a more power-efficient solution. Furthermore, the use of these components contributes to a more reliable and cost-effective solution for device manufacturers.

In conclusion, the RGP30J-E3/73 rectifier diode is a high-performance yet cost-efficient solution for a wide range of AC-DC and DC-DC applications, providing a reliable and cost-effective solution for device manufacturers. Its PN junction allows for a wide range of voltages and speeds to operate over and its power efficiency and cost make it an ideal choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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