RGT80TS65DGC11 Discrete Semiconductor Products

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The RGT80TS65DGC11 belongs to transistors, more specifically to a family of transistors called IGBTs (Insulated Gate Bipolar Transistors), which are a kind of power transistors that have the particularity of being composed of two branches carved out of a single component, and more precisely to the type of single IGBTs. It is mainly used in automotive, industrial and other similar electronic applications, and its main functions are related to the switching and controlling of currents of high voltage and capacities.

Overview

The RGT80TS65DGC11 has a package size of 80V/650A and a max operating voltage of approximately 800V. It has an efficiency of more than 99% and a thermal impedance of 27.6 degrees Celsius. It has an operating frequency of 2MHz and can handle up to 200A of maximum average load current. It also has a total gate charge of 25nC and a gate threshold voltage of 1.3V. Its peak collector-emitter voltage is of 650V.

Application Field

The RGT80TS65DGC11 is mainly used in automotive, industrial and other similar applications where a high voltage and capacity current need to be switched and controlled. It is mostly used for starter systems, solar panel inverters and motor drives as well as in some electric welding machines and high power DC converters. It can also be used in surgical systems and medical equipments, as well as in some robotic controlling and motion controlling applications.

Working Principle

The RGT80TS65DGC11 works by allowing current to pass between the collector and emitter through an insulating layer called the Gate-Oxide-Layer. When voltage is applied to this Gate-Oxide-Layer, a connection is made between the collector and the emitter, thus allowing current to flow between them. The IGBT transistors are also known as voltage-controlled transistors, and they operate at very high currents and voltages, making them efficient and reliable.

The RGT80TS65DGC11 also features a built-in protection circuit that prevents high voltage spikes and protects the transistor from damage due to over-voltage or over-current. This protection circuit also prevents the transistor from burning out due to excessive current. The IGBT transistors also have the ability to switch and control heavy loads with ease, due to their low switching losses, thus making them perfect for applications that require a high power load.

Conclusion

The RGT80TS65DGC11 is a single IGBT transistor with a package size of 80V/650A and a max operating voltage of approximately 800V. It is mainly used in automotive, industrial and other similar electronic applications, and its main functions are related to the switching and controlling of currents of high voltage and capacity. Its built-in protection circuit is also able to prevent high voltage spikes and protect the transistor from over-voltage and over-current. Its low switching losses also make it the ideal choice for applications that require a heavy load.

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