RGT8NS65DGTL Discrete Semiconductor Products

Power - Max:	65W
Supplier Device Package:	LPDS (TO-263S)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	40ns
Test Condition:	400V, 4A, 50 Ohm, 15V
Td (on/off) @ 25°C:	17ns/69ns
Gate Charge:	13.5nC
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 4A
Current - Collector Pulsed (Icm):	12A
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The RGT8NS65DGTL is a type of IGBT (Insulated Gate Bipolar Transformer) that is used in a variety of applications. It is a single IGBT device which has a current rating of 8A and a voltage rating of 800V. It has a low gate-source voltage, fast switching speed and high reliability, making it suitable for high power applications. In this article, we will take a closer look at the application field and working principle of the RGT8NS65DGTL.

Application Field

The RGT8NS65DGTL can be used in a variety of applications including switching power supplies, motor drives, inverters and light dimming systems. It is often used in circuits that require high frequency switching and high current densities, such as power supplies, inverters and motor controllers. Its low gate-source voltage makes it suitable for applications where low voltage operation is necessary.

Working Principle

An IGBT is a type of transistor that combines the advantages of both a bipolar junction transistor (BJT) and a field-effect transistor (FET). It is composed of a P-type layer, an N-type layer, and a second P-type layer. When an electrical signal is applied to the Gate terminal, it creates an electric field between the left and right sides of the IGBT and causes minority charge carriers to move from the N-type layer to the P-type layer. This creates a channel of current and allows current to flow from the Collector to the Emitter. When the signal is removed, the channel is destroyed and current ceases to flow. The RGT8NS65DGTL has a low gate-source voltage which allows it to switch faster and more reliably than other IGBTs. Its fast switching speed makes it suitable for applications where high frequency switching is necessary.

Conclusion

The RGT8NS65DGTL is a single IGBT device which has a low gate-source voltage, a fast switching speed, and a high current density. This makes it suitable for applications such as switching power supplies, motor controllers, inverters, and light dimming systems. Its working principle involves the creation of an electrical field between the left and right sides of the IGBT which allows current to flow from the Collector to the Emitter.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description