RJH1CF4RDPQ-80#T2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The RJH1CF4RDPQ-80#T2 is a single insulated-gate bipolar transistor (IGBT). It is used in various switching and linear applications such as power electronics and motor control applications. The device includes a 50A current carrying capability with a maximum voltage of 800V (Vce(on) = 24V/25A). It is used in applications where speed control and power application are two important requirements.

Application Field
The RJH1CF4RDPQ-80#T2 IGBT is primarily used in motor control applications such as electronic speed control and power supply applications. It is suitable for applications where high speed of operation, low power consumption and low voltage drop are required. With the combination of high power output, high efficiency, low voltage drop and fast switching, the device can be used in applications such as small vehicle motor control (compact cars), inverters and AC/DC power converters.

The device is also used in automotive, aviation, and other industrial control applications. In particular, it is suitable for applications where high power and efficiency are required, such as gas-engine starter modules, welders, air conditioners, and hydraulic pump drives. It can also be used in precision power conversion systems, power converters, rectifiers, resonant converters, PFC converters, motor drives, and motor control systems.

In addition, this device has a wide range of applications in consumer electronics such as smart phones, laptops, tablets and other portable electronic devices. It is highly efficient and reliable in miniaturized electronic applications such as personal electronic toys, LCD touch screen displays and power banks.

Working Principle
The RJH1CF4RPDQ-80#T2 IGBT works on the principle of bipolar transistor (BJT). It is basically comprised of two parts, an N-channel field-effect transistor (FET) and a PNP bipolar transistor (BJT). The FET is connected to the source, gate and drain terminals, while the BJT is connected to the collector and emitter terminals.

When a voltage is applied to the gate terminal of the FET, it turns on and pulls down the junction between the collector and emitter terminals of the BJT, which leads to the conduction of current through the BJT. This conduction of current is used to control the voltage at the collector and emitter terminals of the BJT. The BJT, in turn, controls the amplitude of the voltage applied to the gate terminal of the FET. This characteristic improves the switching speed of the device and the overall efficiency.

With its fast switching speed, the device can be used in applications that require high-speed switching. Furthermore, it is also suitable for power supply applications due to its low on-state voltage drop. Since it is highly integrated, it offers low power consumption, making it an ideal choice for portable and miniature electronics.

Conclusion
The RJH1CF4RDPQ-80#T2 is a single insulated-gate bipolar transistor (IGBT) suitable for various switching and linear applications such as power electronics and motor control applications. It has a 50A current carrying capability with a maximum voltage of 800V (Vce(on) = 24V/25A). It is used in applications where speed control and power application are both important requirements. The device works on the principle of bipolar transistor and has a fast switch speed and low on-state voltage drop, making it suitable for power supply applications. It is suitable for consumer electronics, automotive and aviation applications, and other industrial control applications.

The specific data is subject to PDF, and the above content is for reference