RJH1CV5DPK-00#T0

Input Type:	Standard
Supplier Device Package:	TO-3P
Package / Case:	TO-3P-3, SC-65-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	170ns
Test Condition:	600V, 25A, 5 Ohm, 15V
Td (on/off) @ 25°C:	42ns/105ns
Gate Charge:	72nC
Series:	--
Switching Energy:	1.9mJ (on), 1.5mJ (off)
Power - Max:	245W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 25A
Current - Collector (Ic) (Max):	50A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	Trench
Part Status:	Active
Packaging:	Tube

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Introduction

RJH1CV5DPK-00#T0 is a unit from the family of single IGBTs transistors. IGBTs are a type of semiconductor devices designed specifically for high power applications, such as power supplies and industrial automation. IGBTs are composed of two main components, an N-channel MOSFET and a P-channel MOSFET, in the same package. The technology of IGBTs combines at the same time the good features of both the MOSFET (low on-resistance, complete insulation) and the BJT (low switching losses, very high current handling ratings), resulting in higher efficiency in power electronic applications.

Features

The RJH1CV5DPK-00#T0 provides good high voltage performance, with a voltage range of 600V. Other features associated with this unit include its low switching losses, fast switching capability and excellent surge current capability. It offers a high junction temperature operation capability of up to 175°C. This transistor offers a wide current range, from 5A up to 50A, and a low gate charge, allowing the device to switch fast, with a high speed switching rate of up to 4kHz. This feature is important for applications where there is a need for high switching speed and for high-frequency operations.

Application Field

This single IGBTs transistor from the RJH1CV5DPK-00#T0 series is well suited for many applications, such as power supplies, motor drives, UPS systems and HF (high-frequency) general-purpose switching applications. This device may also find use in motion control and other industrial electronic applications. It is particularly well suited for high-frequency applications, due to its fast switching capabilities.This transistor is also suitable for appliances, components, which are associated with medical and medical equipment. In medical applications, its use results in low noise and low power consumption, eliminating the need for cooling fans.

Working Principle

An IGBT transistor is essentially a combination of two transistors, an N-channel MOSFET and a P-channel MOSFET, in one package. When the gate voltage is applied, the N-channel MOSFET turns on, allowing current to flow through the device. The P-channel MOSFET then turns on, allowing current to flow in the opposite direction and providing a balanced current flow over the device. When the gate voltage is removed, both the N-channel and P-channel MOSFETs turn off, and the device blocks current in both directions. This process is known as “short-circuiting”, and it prevents any current from flowing through the transistor. The IGBT transistor is able to switch high currents with excellent efficiency, low switching losses and high current ratings. This makes it suitable for a wide range of applications, such as power supplies, motor drives, UPS systems and HF switching applications.

Conclusion

RJH1CV5DPK-00#T0 is a single IGBTs transistor, designed to provide excellent performance in high power applications. This unit offers many features including a wide current range, low switching losses, fast switching capability and excellent surge current capability. This transistor is suitable for power supplies, motor drives, UPS systems, HF switching and medical applications. It is capable of switching high currents with excellent efficiency, making it highly suitable for a wide range of applications.

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