RJU3052SDPD-E0#J2 Allicdata Electronics
Allicdata Part #:

RJU3052SDPD-E0#J2-ND

Manufacturer Part#:

RJU3052SDPD-E0#J2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: DIODE GEN PURP 360V 20A TO252
More Detail: Diode Standard 360V 20A Surface Mount TO-252
DataSheet: RJU3052SDPD-E0#J2 datasheetRJU3052SDPD-E0#J2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 360V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 1µA @ 360V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C
Description

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RJU3052SDPD-E0#J2 is a single rectifier diode. It is a semiconductor device that is used to convert alternating current into a unidirectional current. It consists of a junction between two types of semiconductor material, n-type and p-type, and is used in various applications.

The application fields of RJU3052SDPD-E0#J2 include power supplies, high-frequency rectifier circuits, overvoltage protection circuits, motor control, inverter circuits, and motor starter circuits. In these applications, the rectifier diode is used to convert the AC power supply into a DC power supply. As such, the rectifier diode can be used to improve the performance of the current drive, voltage conversion, and power conditioning circuits. Moreover, the rectifier diode can protect the circuit from damage caused by short outages or transient overvoltages.

The working principle of RJU3052SDPD-E0#J2 is based on a biased-junction formed between two oppositely doped materials. The voltage applied to the anode of the diode establishes a forward bias across the PN junction, creating an electric field through the junction. This electrical field provides enough energy to enable the flow of current through the diode. Under reverse biasing conditions, electrons dominate the P-type semiconductor material and the majority carriers in the conduction band of the N-type material. This creates a depletion region which prevents the flow of current.

The main features of RJU3052SDPD-E0#J2 include low voltage drop in forward direction, low switching noise, a high capacitance junction, and zero recovery time in reverse direction. It also has a high breakdown voltage and surge voltage capability, as well as a low power consumption. Additionally, the diode can dissipate low-power signals into higher and steeper pulses or current spikes, enabling the diode to provide numerous applications. With its wide range of use cases, RJU3052SDPD-E0#J2 is one of the most widely used and essential single rectifier diodes in electrical and electronic engineering today.

The specific data is subject to PDF, and the above content is for reference

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