RJU60C3SDPD-E0#J2 Allicdata Electronics
Allicdata Part #:

RJU60C3SDPD-E0#J2-ND

Manufacturer Part#:

RJU60C3SDPD-E0#J2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: DIODE GEN PURP 600V 10A TO252
More Detail: Diode Standard 600V 10A Surface Mount TO-252
DataSheet: RJU60C3SDPD-E0#J2 datasheetRJU60C3SDPD-E0#J2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Description

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Diodes are the most common type of active electronics components found in a vast number of devices and circuits. The ability of a diode to convert AC signals into DC signals makes it an indispensable component in many electronic applications. In this article, we will explore the application field and working principle of the RJU60C3SDPD-E0#J2 diode, which is classified under the Rectifier - Single diode group.

RJU60C3SDPD-E0#J2 is a silicon-based, high-efficiency, high-current diode with a current rating of 3 A, a peak repetitive reverse voltage of 600 V, and a forward voltage of 1.6 V. The device is suitable for both AC mains rectification and free-wheeling applications. Due to its low forward voltage drop and low reverse leakage, it is ideal for use in power management and regulation systems requiring high performance efficiency and long battery life, such as Uninterrupted Power Systems (UPSs), server management systems, solar energy systems, and distributed-power applications.

RJU60C3SDPD-E0#J2 works according to the PN junction diode working principle. A PN junction is a region in a semiconductor where two materials with unequal electron concentrations, namely P-type and N-type material, meet and form a junction. The diode is so designed that current in the forward bias direction is allowed to flow freely through the diode, while current in the reverse bias direction is blocked. The diode has a positive temperature coefficient, meaning that its current increases with increasing temperature.

The forward voltage of RJU60C3SDPD-E0#J2 is tuned to be low with respect to the rated current, giving it excellent performance efficiency. In free-wheeling applications, it reduces voltage ripples, leading to excellent output. Its low reverse leakage current is adjustable, which greatly improves the overall device performance and efficiency. Additionally, the diode features a noise suppression capacitance that reduces the noise generated during switching.

RJU60C3SDPD-E0#J2 is a high-efficiency, high-performance, low-cost diode prefect for AC mains rectification and free-wheeling applications. Its wide operating temperature range, low forward voltage drop, adjustable reverse voltage leakage, and noise suppression capacitance make it an ideal choice for eliminating interference and regulating power in unexpected shutdown situations. Its cost-effectiveness makes it a great choice for use in a variety of power management and regulation systems.

The specific data is subject to PDF, and the above content is for reference

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