Allicdata Part #: | RL255GP-TP-ND |
Manufacturer Part#: |
RL255GP-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 2.5A 600V R3 |
More Detail: | Diode Standard 600V 2.5A Through Hole R-3 |
DataSheet: | RL255GP-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03804 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 2.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R-3, Axial |
Supplier Device Package: | R-3 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The RL255GP-TP is a single rectifier diode that is used in a variety of applications. It is designed to rectify AC voltage, providing low forward voltage drop as well as high surge current capability. The RL255GP-TP also features low thermal resistance and low power dissipation capabilities, making it ideal for high-end applications with large reverse voltages and current transients. Application FieldThe RL255GP-TP is used in a wide range of applications requiring high current rectification, including power supplies, converters, and inverters. Additionally, these rectifiers can be used in AC-DC converters and DC-DC converters, as well as in power line applications, high-speed motor control systems, and temperature sensing. With its low thermal resistance, low forward voltage drop, and high surge current capability, the RL255GP-TP is suitable for a variety of applications.Working PrincipleThe RL255GP-TP utilizes a passivated glass epitaxial planar process, which provides high current and voltage capabilities. The passivated glass epitaxial planar process consists of a silicon substrate and a heavily boron-doped epitaxial layer of silicon. The diode is composed of two oppositely-doped regions – the P-region and the N-region. The P-region is boron-doped and the N-region is arsenic-doped, respectively. These regions are separated by a thin oxide window which serves to form the active junction. In the forward direction, a low voltage drop occurs across the active junction and a large amount of current flows. When in the reverse direction, the junction breaks down and no current flows. The breakdown of the junction depends on the reverse voltage applied across the active junction. The higher the voltage, the greater the breakdown, and the lower the forward voltage drop. The forward voltage drop is usually in the range of 0.7V to 0.9V. The RL255GP-TP has a surge rating of up to 10A. This rating is based on the maximum allowable average power dissipation at a specified ambient temperature. The device has a maximum repetitive peak reverse voltage, Vrrm, of 300V and a maximum repetitive peak current, Irrm, of 10A. In summary, the RL255GP-TP is a single rectifier diode that is used in a variety of applications requiring high current rectification. It is designed with a passivated glass epitaxial planar process and features a low forward voltage drop and high surge current capabilities, making it ideal for high-end applications. Additionally, the device has a maximum repetitive peak reverse voltage of 300V, a maximum repetitive peak current of 10A, and a surge rating of up to 10A.
The specific data is subject to PDF, and the above content is for reference
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