RM 11BV1 Allicdata Electronics
Allicdata Part #:

RM11BV1-ND

Manufacturer Part#:

RM 11BV1

Price: $ 0.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 800V 1.2A AXIAL
More Detail: Diode Standard 800V 1.2A Through Hole Axial
DataSheet: RM 11BV1 datasheetRM 11BV1 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.15182
Stock 1000Can Ship Immediately
$ 0.17
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Diodes - Rectifiers - Single: RM 11BV1 application field and working principle

The RM 11BV1 from Raychem is a single, three terminal, miniaturized, bidirectional surface mount TVS diode. The device is ideal for two way communication applications because it is capable to provide ESD protection to both positive and negative polarity. It is also used as a protection against transients in data and telecommunications lines, in industrial equipment and in consumer electronics.The operation principle of the RM 11BV1 is based on a special structure composed of two commonly connected pins and a diode connected between them. The diode is placed between the power pins of the device and its cathode is connected to the ground. This arrangement creates a high impedance state, turning the device off, that prevents signals from being allowed to pass, even when a transient event is encountered.When a transient event occurs, the voltage across the pins increases rapidly and the diode enters a forward condition, providing a low impedance path and limiting the voltage across the pins. This low impedance path also serves to clamp the voltage across the pins and protect the system from overvoltage. Once the transient event is over, the diode restores the device to its high impedance state, turning the device off and preventing signals from passing.The RM 11BV1 is especially suitable for use in compact applications, and it is available in different packages including the DFN, SOT-23 and SMA packages. It supports a variety of working conditions: operating temperature range from -55°C to +150°C, storage temperature range between -55°C and +150°C, and a wide operating voltage ranging from 6 to 150V.In conclusion, the RM 11BV1 from Raychem is an ideal device for two way communication applications, and it can be used as a protection against transients in data and telecommunications lines, in industrial equipment and in consumer electronics. It is designed for compact applications, and it supports a variety of working conditions. The working principle of the device is based on a diode placed between two pins, which is capable to provide ESD protection to both positive and negative polarity. In addition, the RM 11BV1 provides overvoltage protection by clamping the voltage across its pins.

The specific data is subject to PDF, and the above content is for reference

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