Allicdata Part #: | RM1200E-TP-ND |
Manufacturer Part#: |
RM1200E-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 1.2KV 500MA DO214 |
More Detail: | Diode Standard 1200V 500mA Surface Mount DO-214AC ... |
DataSheet: | RM1200E-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 2V @ 500mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1200V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMAE) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The RM1200E-TP is a single rectifier diode ideal for a wide range of applications including switching and rectification of AC signals. Characterized by its low forward voltage drop, high reliability, and high efficiency, the RM1200E-TP is suitable for applications ranging from simple power factor correction to more critical applications like commercial power supplies.
The RM1200E-TP diode operates by allowing current to flow in the forward direction, but blocking current flow in the reverse direction. When the diode is forward biased, the anode becomes more positive than the cathode, creating a built-in electric field within the junction between the two materials (silicon and germanium). The electric field creates a potential barrier that prevents the majority carriers (electrons) from crossing the junction. The built-in electric field also has the effect of reducing the kinetic energy of the carriers, causing them to slow down and be unable to move across the junction. As the diode is forward biased, the anode becomes more positive than the cathode, creating a built-in electric field within the junction between the two materials. This electric field creates a potential barrier, which prevents the majority carriers (electrons) from crossing the junction.
The RM1200E-TP can be used as either a rectifier or a switch depending on the application. In switching applications, it can be used to control the flow of current. The energy stored in an inductor or capacitor can be used to switch the diode between forward and reverse biased states, allowing current to flow in either direction. This allows the diode to act as an electronic switch, since the diode will only be conducting when forward biased and not conducting when reverse biased.
The RM1200E-TP diode is also used widely in power factor correction applications. It is used to convert AC signals into a DC signal, which can then be used to correct power factor. In power factor correction applications, the RM1200E-TP acts as a rectifier by preventing current from flowing in the reverse direction. The resulting DC signal is then used to correct power factor by offsetting any out-of-phase current.
The RM1200E-TP diode is a versatile device that can be used for a variety of applications. It can be used as an electronic switch or as a rectifier, making it an ideal choice for power factor correction applications. The device\'s low forward voltage drop and high reliability make it a reliable and efficient choice for applications ranging from simple power factor correction to more critical applications like commercial power supplies.
The specific data is subject to PDF, and the above content is for reference
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