
Allicdata Part #: | RM2C-ND |
Manufacturer Part#: |
RM 2C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE GEN PURP 1KV 1.2A AXIAL |
More Detail: | Diode Standard 1000V 1.2A Through Hole Axial |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.2A |
Voltage - Forward (Vf) (Max) @ If: | 910mV @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -40°C ~ 150°C |
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A diode rectifier is an electronic circuit which is used to convert alternating current (AC) electricity into direct current (DC) electricity. The RM 2C is a single diode rectifier which is designed for 25 A applications that require long-term reliable operation. It is primarily used in power supplies, starter systems and other current-sensitive applications. This device is composed of an oxide-coated metal layer which acts as a rectifying layer and is connected between two metallic electrodes.
The working principle of the RM 2C is the same as any electrical diode rectifier. An electrical current is carried through a diode in only one direction, allowing current to flow in one direction, while blocking current in the other direction. This rectifying process eliminates the alternating current and results in a unidirectional current, or direct current. The RM 2C uses a two-layer oxide material as the rectifying layer. This oxide layer is connected between two metallic electrodes. The first layer is an anode electrode, made from a metal or alloy composed of aluminum, zinc, or nickel. It is deposited with an oxide material to form the rectifying junction. The second electrode is a cathode layer, which is usually made from the same material as the anode.
When applying a DC voltage across the two electrodes of the RM 2C, a potential difference is created across the oxide layer. This potential difference causes a conductive channel to form across the oxide material of the rectifying junction. This creates a current flow path in the forward direction, allowing electricity to flow in the positive direction. When the voltage is reversed, the positive and negative charges repel each other, causing the current flow path to be blocked. This prevents the electric current from flowing in the opposite direction, thus allowing only one-way electric current to flow through the RM 2C.
The RM 2C is an ideal choice for power supplies, starter systems, and other current-sensitive applications. Its optimum characteristic enables it to operate at low voltage with a low forward voltage drop, making it suitable for high-efficiency power conversion. The device also provides reliable and efficient operation over long periods of time. Its two-layer oxide layer creates high-temperature stability and low capacitance at high frequencies, which allows for long-term operation. Its compact design, small mounting area, and low profile save space and money when incorporated into power supplies and other current-sensitive applications.
The RM 2C single diode rectifier is a reliable and efficient solution for power applications which require long-term reliable operation. Its two-layer oxide layer creates an efficient rectifying junction, allowing electricity to flow in one direction while blocking current in the other direction. Its low voltage, low forward voltage drop, high temperature stability and low capacitance at high frequencies make it ideal for power supplies and starter systems. Moreover, its compact design, small mounting area and low profile make it an economical choice for current-sensitive applications.
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