
Allicdata Part #: | 1265-1234-5-ND |
Manufacturer Part#: |
RM24C64C-LTAI-B |
Price: | $ 0.39 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Adesto Technologies |
Short Description: | IC CBRAM 64K I2C 1MHZ 8TSSOP |
More Detail: | CBRAM Memory IC 64kb (32B Page Size) I²C 1MHz 8-T... |
DataSheet: | ![]() |
Quantity: | 13053 |
1 +: | $ 0.35280 |
10 +: | $ 0.34839 |
25 +: | $ 0.32357 |
50 +: | $ 0.32180 |
100 +: | $ 0.28583 |
250 +: | $ 0.28209 |
500 +: | $ 0.27788 |
1000 +: | $ 0.27043 |
5000 +: | $ 0.24307 |
Series: | Mavriq™ |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | CBRAM® |
Technology: | CBRAM |
Memory Size: | 64kb (32B Page Size) |
Clock Frequency: | 1MHz |
Write Cycle Time - Word, Page: | 100µs, 1.2ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RM24C64C-LTAI-B is a memory device with various application fields, such as embedded systems and consumer electronics. It is a type of static random access memory (SRAM), which is capable of retaining data even when the power supply is turned off. It is a type of nonvolatile memory, meaning that the data stored in it does not require a continuous power supply for it to remain intact. The RM24C64C-LTAI-B consists of a 64K complementary metal–oxide–semiconductor (CMOS) memory cell array, which is organized as 4096 x 16 bit words with four independent I/O ports.
The RM24C64C-LTAI-B is easy to use as it can be connected to any type of standard microprocessor without the need to add any external circuitry. In addition, its small size, low voltage (1.8V) operation and low power consumption makes it an ideal choice for use in portable applications.
The main principle of operation of the RM24C64C-LTAI-B is based on the use of a 2-dimensional array of cells, which are organized as a matrix. Each cell is composed of two parts - a voltage shift register (VSR) and a data register (DR). The VSR is a type of register that changes the voltage level of its data when it is activated. The data stored in the VSR can be accessed through the I/O ports. For example, when a particular I/O port is enabled, the voltage across the VSR is shifted by one half a bit and the data stored in the VSR is outputted. The data register then stores the data that has been outputted.
The RM24C64C-LTAI-B also has the ability to automatically detect errors and correct them, which helps to increase its reliability and performance. This is achieved by utilizing a built-in error correction code (ECC), which is stored in the device\'s auxiliary memory. The ECC is used to detect and correct any errors that are detected during the data transfer process. This helps to ensure that the data stored in the RM24C64C-LTAI-B is always accurate and reliable.
In short, the RM24C64C-LTAI-B is a memory device with various applications fields, which is easy to use and has low power consumption. Its main principle of operation is based on the utilization of a 2-dimensional array of cells with built-in error detection and correction code. This makes the RM24C64C-LTAI-B ideal for use in embedded systems and other portable applications.
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