Allicdata Part #: | 1265-1312-2-ND |
Manufacturer Part#: |
RM25C32DS-LSNI-T |
Price: | $ 0.32 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Adesto Technologies |
Short Description: | IC CBRAM 32K SPI 20MHZ 8SOIC |
More Detail: | CBRAM Memory IC 32kb (32B Page Size) SPI 20MHz 8-... |
DataSheet: | RM25C32DS-LSNI-T Datasheet/PDF |
Quantity: | 1000 |
16000 +: | $ 0.28099 |
Series: | Mavriq™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | CBRAM® |
Technology: | CBRAM |
Memory Size: | 32kb (32B Page Size) |
Clock Frequency: | 20MHz |
Write Cycle Time - Word, Page: | 100µs, 2.5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RM25C32DS-LSNI-T is a piece of memory that has a variety of applications. It is a 32-bit Serial Peripheral Interface Nonvolatile Static RAM, which means that it is a type of memory that can maintain its data even when the power is gone. It is commonly used in a variety of embedded systems, communication systems, and industrial automation systems. This type of memory is often used in applications that require low latency and high data transfer rates, such as data logging and control loops.The RM25C32DS-LSNI-T has a maximum working voltage of 2.7V-3.6V and a current consumption of 60mA which makes it very energy efficient. It can store up to 32k- words (1 word is 4-bytes) and the data is retained even when the power is turned off. It supports both serial and parallel data transfer mode, and has a power-down protection feature which prevents data loss during power failure.In terms of its working principle, the RM25C32DS-LSNI-T utilizes a technique known as E2-MEM. This technique uses a floating gate transistor which can be programmed and erased electronically. These transistors serve as the memory cells, and they allow the RM25C32DS-LSNI-T to store and retrieve data. The data can be written and erased by applying electrical pulses of certain voltages and lengths.In addition, the RM25C32DS-LSNI-T features an internal voltage detection circuit that recognizes an input voltage from 1.6V to 4.5V and automatically sets the operation voltage of the device. This allows the device to maintain a certain voltage level, ensuring that the memory operations are stable and accurate.The RM25C32DS-LSNI-T has a wide variety of applications and is used in a variety of systems, from embedded applications to industrial automation. Its fast data transfer rates and low power consumption make it an ideal choice for applications that require reliable data storage. Its internal voltage detection circuit ensures that memory operations are accurate and stable even when the power supply fluctuates. This combination of features makes the RM25C32DS-LSNI-T an ideal choice for industrial and embedded applications that require reliable memory operations.
The specific data is subject to PDF, and the above content is for reference
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